| X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering | |
| R. Xiong; J. Shi | |
| 2005 | |
| Source Publication | Journal of Materials Science & Technology
 |
| ISSN | 1005-0302 |
| Volume | 21Issue:4Pages:541-544 |
| Abstract | TixAl1-xN films have been prepared by RF reactive magnetron sputtering. X-ray diffraction results showed that TixAl1-xN thin films in this study were hexagonal wurtzite structure with the Ti content up to 0.18. X-ray photoelectron spectrocopy studies provided that the N1s core-electron spectrum of TixAl1-xN thin film brodend with increasing Ti content, and the difference of the chemical shifts for Ti2p(3/2) line between TiN and TixAl1-xN thin film was 0.7 eV. |
| description.department | wuhan univ, dept phys, wuhan 430072, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;xiong, r (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china;xiongrui@whu.edu.cn |
| Keyword | Tixal1-xn Films X-ray Photoelectron Spectroscopy Core-electron Spectrum Aluminum Nitride Films Ion Plating Method Vapor-deposition Coatings Microstructure Growth Tools Ain Ti |
| URL | 查看原文 |
| WOS ID | WOS:000230978600022 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/35155 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | R. Xiong,J. Shi. X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering[J]. Journal of Materials Science & Technology,2005,21(4):541-544. |
| APA | R. Xiong,&J. Shi.(2005).X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering.Journal of Materials Science & Technology,21(4),541-544. |
| MLA | R. Xiong,et al."X-ray photoelectron spectroscopy studies of TixAl1-xN thin films prepared by RF reactive magnetron sputtering".Journal of Materials Science & Technology 21.4(2005):541-544. |
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