Effect of electromigration on the interfacial structure of solder interconnects was examined in a Sn-Bi/Cu interconnect system. At current densities above 10(4) A/cm(2), Bi migrated along the direction of the electron flow in the solder alloy. A continuous Bi layer was found at the solder interface on the anode side, while a Sn-rich region formed at the cathode side of the electrical connection. The presence of the Bi layer inhibited further growth of Cu-Sn intermetallic phase at the interface by acting as a diffusion barrier to the reacting species.
部门归属
shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. univ illinois, dept mat sci & engn, urbana, il 61801 usa.;yang, ql (reprint author), shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china;jkshang@uiuc.edu
Q. L. Yang,J. K. Shang. Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect[J]. Journal of Electronic Materials,2005,34(11):1363-1367.
APA
Q. L. Yang,&J. K. Shang.(2005).Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect.Journal of Electronic Materials,34(11),1363-1367.
MLA
Q. L. Yang,et al."Interfacial segregation of Bi during current stressing of Sn-Bi/Cu solder interconnect".Journal of Electronic Materials 34.11(2005):1363-1367.
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