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Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction
K. Zhao; Y. H. Huang; Q. L. Zhou; K. J. Jin; H. B. Lu; M. He; B. L. Cheng; Y. L. Zhou; Z. H. Chen; G. Z. Yang
2005
发表期刊Applied Physics Letters
ISSN0003-6951
卷号86期号:22
摘要A photovoltaic effect is observed in the heterostructure of p-Si/n-SrTiO3-delta (p: hole carrier type, n: electron carrier type). The current-voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126 mV/mJ, the short circuit current of 1.78 mA/mJ, and the response time faster than 10 ns for ultraviolet pulsed laser of 25 ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application. (c) 2005 American Institute of Physics.
部门归属chinese acad sci, inst phys, natl lab condensed matter phys, beijing 100080, peoples r china. liaocheng univ, sch phys sci & informat technol, spintron lab, shandong 252059, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;lu, hb (reprint author), chinese acad sci, inst phys, natl lab condensed matter phys, pob 603, beijing 100080, peoples r china;hblu@aphy.iphy.ac.cn
关键词Molecular-beam Epitaxy Srtio3 Thin-films Doped Srtio3 Deposition Silicon
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WOS记录号WOS:000229590100029
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被引频次:58[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35265
专题中国科学院金属研究所
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K. Zhao,Y. H. Huang,Q. L. Zhou,et al. Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction[J]. Applied Physics Letters,2005,86(22).
APA K. Zhao.,Y. H. Huang.,Q. L. Zhou.,K. J. Jin.,H. B. Lu.,...&G. Z. Yang.(2005).Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction.Applied Physics Letters,86(22).
MLA K. Zhao,et al."Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction".Applied Physics Letters 86.22(2005).
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