Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction | |
K. Zhao; Y. H. Huang; Q. L. Zhou; K. J. Jin; H. B. Lu; M. He; B. L. Cheng; Y. L. Zhou; Z. H. Chen; G. Z. Yang | |
2005 | |
发表期刊 | Applied Physics Letters
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ISSN | 0003-6951 |
卷号 | 86期号:22 |
摘要 | A photovoltaic effect is observed in the heterostructure of p-Si/n-SrTiO3-delta (p: hole carrier type, n: electron carrier type). The current-voltage curve exhibits a good rectifying characteristic similar to that of the traditional diode. The junction shows the open circuit voltage of 126 mV/mJ, the short circuit current of 1.78 mA/mJ, and the response time faster than 10 ns for ultraviolet pulsed laser of 25 ns in duration at room temperature, suggesting the promising potential of this junction as a new type of ultrafast ultraviolet detectors with high sensitivity for application. (c) 2005 American Institute of Physics. |
部门归属 | chinese acad sci, inst phys, natl lab condensed matter phys, beijing 100080, peoples r china. liaocheng univ, sch phys sci & informat technol, spintron lab, shandong 252059, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;lu, hb (reprint author), chinese acad sci, inst phys, natl lab condensed matter phys, pob 603, beijing 100080, peoples r china;hblu@aphy.iphy.ac.cn |
关键词 | Molecular-beam Epitaxy Srtio3 Thin-films Doped Srtio3 Deposition Silicon |
URL | 查看原文 |
WOS记录号 | WOS:000229590100029 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35265 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | K. Zhao,Y. H. Huang,Q. L. Zhou,et al. Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction[J]. Applied Physics Letters,2005,86(22). |
APA | K. Zhao.,Y. H. Huang.,Q. L. Zhou.,K. J. Jin.,H. B. Lu.,...&G. Z. Yang.(2005).Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction.Applied Physics Letters,86(22). |
MLA | K. Zhao,et al."Ultraviolet photovoltage characteristics of SrTiO3-delta/Si heterojunction".Applied Physics Letters 86.22(2005). |
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