Electron transport of a quantum wire containing a finite-size impurity under terahertz electromagnetic-field illumination

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	Electron transport of a quantum wire containing a finite-size impurity under terahertz electromagnetic-field illumination
	G. Zhou; Y. Li; F. Cheng; W. Liao
	2005
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	97 期号:12
摘要	We investigate theoretically the electron-transport properties for a semiconductor quantum wire containing a single finite-size attractive impurity under an external terahertz electromagnetic-field illumination in the ballistic limit. Within the effective-mass free-electron approximation, the scattering matrix for the system has been formulated by means of a time-dependent mode matching method. Some interesting properties of the electron transmission for the system have been shown through numerical examples. It is found that in the case of a relatively large field amplitude and a frequency resonant with that corresponding to the difference between the two lowest lateral energy levels in the impurity region, the field-induced intersubband transition dominates the process as it does in the absence of the impurity. Furthermore, there is a steplike structure on the transmission as a function of the incident electron energy. However, in the case of a small field amplitude and nonresonant frequencies, both multiple symmetry Breit-type resonance peaks and asymmetry Fano-type dip lines appear in the electron transmission dependence on the incident energy due to the presence of the impurity and the external field. Therefore, within a certain energy range the transmission as a function of the field frequency and/or field amplitude shows a rich structure. Moreover, the transmission dependence on the strength and size of the impurity is also discussed. Our results suggest that the electron-transport properties of a quantum wire are affected by the interplay effects between the impurity and the applied field. (c) 2005 American Institute of Physics.
部门归属	ccast, world lab, china ctr adv sci & technol, beijing 100080, peoples r china. hunan normal univ, dept phys, changsha 410081, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;zhou, g (reprint author), ccast, world lab, china ctr adv sci & technol, pob 8730, beijing 100080, peoples r china;ghzhou@hunnu.edu.cn
关键词	Quantized Conductance Point Contacts Attractive Impurity Resistance Channel Irradiation
URL	查看原文
WOS记录号	WOS:000230278100040
引用统计	被引频次：6[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35290
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. Zhou,Y. Li,F. Cheng,et al. Electron transport of a quantum wire containing a finite-size impurity under terahertz electromagnetic-field illumination[J]. Journal of Applied Physics,2005,97(12).
APA	G. Zhou,Y. Li,F. Cheng,&W. Liao.(2005).Electron transport of a quantum wire containing a finite-size impurity under terahertz electromagnetic-field illumination.Journal of Applied Physics,97(12).
MLA	G. Zhou,et al."Electron transport of a quantum wire containing a finite-size impurity under terahertz electromagnetic-field illumination".Journal of Applied Physics 97.12(2005).