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Dislocation interaction with hydrides in titanium containing a low hydrogen concentration
C. Q. Chen; S. X. Li; K. Lu
2004
发表期刊Philosophical Magazine
ISSN1478-6443
卷号84期号:1页码:29-43
摘要The dislocation configurations and their interactions with gamma-hydrides were investigated in cyclically strained titanium containing 77 ppm hydrogen. At least three sets of dislocations could be activated in hydride precipitates. To accommodate the inhomogeneous strain between the matrix and the hydrides a crystal rotation, which is a rotation about the [001](gamma)//[0001](alpha) axis, occurred in both of them. Accordingly cell structures with misorientations up to 10degrees about the same [0001](alpha) axis formed in the matrix near the interface. A mechanism for the crystal rotation and cell formation was proposed. Also hydride dissolution and strain-induced hydrides were observed at the intersections of slip bands with hydrides, and this was considered to be a process controlled by the hydrogen-transport effect of slipping dislocations.
部门归属chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;chen, cq (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china;cqchen@imr.ac.cn
关键词Electron-microscopy Alpha-titanium Fracture Initiation Zircaloy-4 Plate Grain-boundaries Single-crystal Slip Transfer Deformation Embrittlement Behavior
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WOS记录号WOS:000188009700003
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被引频次:15[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35320
专题中国科学院金属研究所
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C. Q. Chen,S. X. Li,K. Lu. Dislocation interaction with hydrides in titanium containing a low hydrogen concentration[J]. Philosophical Magazine,2004,84(1):29-43.
APA C. Q. Chen,S. X. Li,&K. Lu.(2004).Dislocation interaction with hydrides in titanium containing a low hydrogen concentration.Philosophical Magazine,84(1),29-43.
MLA C. Q. Chen,et al."Dislocation interaction with hydrides in titanium containing a low hydrogen concentration".Philosophical Magazine 84.1(2004):29-43.
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