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Electronic properties and bonding configuration at the TiN/MgO(001) interface
D. Chen; X. L. Ma; Y. M. Wang; L. Chen
2004
Source PublicationPhysical Review B
ISSN1098-0121
Volume69Issue:15
AbstractGrowth modes of a TiN thin film, epitaxially grown on MgO(001) substrate, have been proposed on the basis of transmission electron microscopic observation and theoretical calculations. The first-principle plane wave pseudopotential method, based on density functional theory, is applied to calculate electronic properties and bonding configurations at the interface. The theoretical calculations within framework of the observed orientation relationships show that cation-anion bonding across the TiN/MgO(001) interface is favorable. Interfacial structures for this heteroepitaxial system have been established.
description.departmentchinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;chen, d (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
KeywordAb-initio Titanium Nitride Mgo Pseudopotentials 1st-principles Constants Adhesion Energy Growth Films
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WOS IDWOS:000221426800105
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Cited Times:19[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/35322
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
D. Chen,X. L. Ma,Y. M. Wang,et al. Electronic properties and bonding configuration at the TiN/MgO(001) interface[J]. Physical Review B,2004,69(15).
APA D. Chen,X. L. Ma,Y. M. Wang,&L. Chen.(2004).Electronic properties and bonding configuration at the TiN/MgO(001) interface.Physical Review B,69(15).
MLA D. Chen,et al."Electronic properties and bonding configuration at the TiN/MgO(001) interface".Physical Review B 69.15(2004).
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