C and Si ion implantation and the origins of yellow luminescence in GaN

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	C and Si ion implantation and the origins of yellow luminescence in GaN
	L. Dai; G. Z. Ran; J. C. Zhang; X. F. Duan; W. C. Lian; G. G. Qin
	2004
发表期刊	Applied Physics a-Materials Science & Processing
ISSN	0947-8396
卷号	79 期号:1 页码:139-142
摘要	We have studied the influence of C and Si ion implantation with different implantation doses on yellow luminescence (YL) from GaN. Three kinds of GaN samples were used. In their as-grown states, #1 samples had strong YL, #2 samples had no YL, while #3 samples had weak YL. Our experimental results show that: (i) after annealing at 950 degreesC, the YL intensity for Si ion implanted #1 sample decreased with increasing implantation dose, while that for C ion implanted #1 sample exhibited a reverse rule; (ii) for #2 samples, C ion implantation produced much stronger YL than Si ion implantation did after annealing at 950 degreesC; (iii) the YL intensity sequence for Si ion implanted and 950 degreesC annealed #1, #2, and #3 samples was consistent with that for the unimplanted #1, #2, and #3 samples. However, the YL intensity sequence for the C ion implanted and 950 degreesC annealed #1, #2, and #3 samples reversed with that for the unimplanted ones. In order to explain all these phenomena, we suggested a physical model which claims that the deep C center is another important origin of YL in GaN, and during C ion implantation, the C ion prefers to combine with a V-Ga to form a C-Ga.
部门归属	peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, sch phys, beijing 100871, peoples r china;qingg@pku.edu.cn
关键词	Detected Magnetic-resonance Vapor-phase Epitaxy Undoped Gan Photoluminescence Vacancies Nitrides
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WOS记录号	WOS:000220385600024
引用统计	被引频次：11[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35335
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Dai,G. Z. Ran,J. C. Zhang,et al. C and Si ion implantation and the origins of yellow luminescence in GaN[J]. Applied Physics a-Materials Science & Processing,2004,79(1):139-142.
APA	L. Dai,G. Z. Ran,J. C. Zhang,X. F. Duan,W. C. Lian,&G. G. Qin.(2004).C and Si ion implantation and the origins of yellow luminescence in GaN.Applied Physics a-Materials Science & Processing,79(1),139-142.
MLA	L. Dai,et al."C and Si ion implantation and the origins of yellow luminescence in GaN".Applied Physics a-Materials Science & Processing 79.1(2004):139-142.