Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires

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	Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires; Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires
	L. Dai; L. P. You; X. F. Duan; W. C. Lian; G. G. Qin
	2004 ; 2004
发表期刊	Journal of Crystal Growth ; Journal of Crystal Growth
ISSN	0022-0248 ; 0022-0248
卷号	267 期号:3-4 页码:538-542
摘要	Chains of closely spaced metal or semiconductor particles have potential applications in optoelectronics and single electron devices. We report, for the first time, the synthesis of Ga2O3 chains with closely spaced knots connected by nanowires using the thermal evaporation method with a specially designed quartz boat. The Ga2O3 chains grew only on the Si substrates where An catalyst or Ga droplets were coated. The average diameter of the knots is about 450 nm and that of the nanowires is about 50 run. The selected area electron diffraction of either a knot or a connecting nanowire includes two sets of overlapped single crystal electron diffraction patterns which belong to the [10 2] and [10 T] crystal zone axes of the monoclinic beta-Ga2O3 phase, respectively. The knot and its neighbor nanowire have the common (2 0 1) growth planes at their interface. A mechanism model for the Ga2O3 chains synthesis based on the vapor-liquid-solid mechanism is discussed. (C) 2004 Elsevier B.V. All rights reserved.; Chains of closely spaced metal or semiconductor particles have potential applications in optoelectronics and single electron devices. We report, for the first time, the synthesis of Ga2O3 chains with closely spaced knots connected by nanowires using the thermal evaporation method with a specially designed quartz boat. The Ga2O3 chains grew only on the Si substrates where An catalyst or Ga droplets were coated. The average diameter of the knots is about 450 nm and that of the nanowires is about 50 run. The selected area electron diffraction of either a knot or a connecting nanowire includes two sets of overlapped single crystal electron diffraction patterns which belong to the [10 2] and [10 T] crystal zone axes of the monoclinic beta-Ga2O3 phase, respectively. The knot and its neighbor nanowire have the common (2 0 1) growth planes at their interface. A mechanism model for the Ga2O3 chains synthesis based on the vapor-liquid-solid mechanism is discussed. (C) 2004 Elsevier B.V. All rights reserved.
部门归属	peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. peking univ, electron microscopy lab, beijing 100871, peoples r china.;qin, gg (reprint author), peking univ, sch phys, beijing 100871, peoples r china;lundai@ibm320h.phy.pku.edu.cn qingg@pku.edu.cn ; peking univ, sch phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. peking univ, electron microscopy lab, beijing 100871, peoples r china.;qin, gg (reprint author), peking univ, sch phys, beijing 100871, peoples r china;lundai@ibm320h.phy.pku.edu.cn qingg@pku.edu.cn
关键词	Field Emission Scanning Electron Microscopy Field Emission Scanning Electron Microscopy High Resolution High Resolution Transmission Electron Microscopy Transmission Electron Microscopy Nanostructures Nanostructures Gallium Oxide Gallium Oxide Gallium Oxide Gallium Oxide Periodic Instability Periodic Instability Beta-ga2o3 Nanowires Beta-ga2o3 Nanowires Thin-film Thin-film Growth Growth Nanostructures Nanostructures
URL	查看原文 ; 查看原文
WOS记录号	WOS:000222484400020 ; WOS:000222484400020
引用统计	被引频次：20[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35336
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Dai,L. P. You,X. F. Duan,et al. Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires, Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires[J]. Journal of Crystal Growth, Journal of Crystal Growth,2004, 2004,267, 267(3-4):538-542, 538-542.
APA	L. Dai,L. P. You,X. F. Duan,W. C. Lian,&G. G. Qin.(2004).Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires.Journal of Crystal Growth,267(3-4),538-542.
MLA	L. Dai,et al."Synthesis of Ga2O3 chains with closely spaced knots connected by nanowires".Journal of Crystal Growth 267.3-4(2004):538-542.