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Carrier density and DC conductivity of ultrathin aluminum films
H. Du; J. Gong; C. Sun; S. W. Lee; L. S. Wen
2004
Source PublicationJournal of Materials Science
ISSN0022-2461
Volume39Issue:8Pages:2865-2867
description.departmentchinese acad sci, inst met res, dept surface engn mat, shenyang 110016, peoples r china. sun moon univ, div mat & chem engn, interface engn lab, asan 336708, chungnam, south korea.;du, h (reprint author), chinese acad sci, inst met res, dept surface engn mat, shenyang 110016, peoples r china, peoples r china;hdu72@hotmail.com
KeywordResistivity Metal Scattering
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WOS IDWOS:000220412400028
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Cited Times:12[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/35349
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
H. Du,J. Gong,C. Sun,et al. Carrier density and DC conductivity of ultrathin aluminum films[J]. Journal of Materials Science,2004,39(8):2865-2867.
APA H. Du,J. Gong,C. Sun,S. W. Lee,&L. S. Wen.(2004).Carrier density and DC conductivity of ultrathin aluminum films.Journal of Materials Science,39(8),2865-2867.
MLA H. Du,et al."Carrier density and DC conductivity of ultrathin aluminum films".Journal of Materials Science 39.8(2004):2865-2867.
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