Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m

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	Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m
	J. Y. Jin; J. Shi; D. C. Tian
	2004
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	19 期号:6 页码:742-746
摘要	A systematic investigation has been undertaken on the growth, characterization and performance of tensile-strained multiple-quantum-well (MQW) lasers emitting at 1.34 mum. Two photoluminescence peaks corresponding to n = 1 electron-light hole (E1-LH1) and n = 1 electron-heavy hole (E1-HH1) transitions are clearly observed in MQW structures. The improvements of tensile strained MQW lasers such as the internal quantum efficiency, internal loss and threshold current are attributed to the increased energy separation between LH1 and HH1 when the tensile strain and well width are larger. The relatively thick barrier layer is required to mitigate the strain relaxation between the quantum wells. The degradation of device performance by the excessive barrier height could be attributed to the exacerbated spatial non-uniformity of the carrier distribution in the valence band. The optimized tensile strained MQW lasers with 300 mum cavity length and ridge waveguide (RWG) structure exhibit a lower threshold current of 13 mA and a higher external differential efficiency per facet of 0.29 mWmA(-1) at 25 degreesC.
部门归属	wuhan univ, dept phys, wuhan 430072, hubei, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;jin, jy (reprint author), wuhan univ, dept phys, wuhan 430072, hubei, peoples r china
关键词	Differential Gain Lasers Amplifiers 1.3-mu-m
URL	查看原文
WOS记录号	WOS:000222252100016
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35389
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Y. Jin,J. Shi,D. C. Tian. Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m[J]. Semiconductor Science and Technology,2004,19(6):742-746.
APA	J. Y. Jin,J. Shi,&D. C. Tian.(2004).Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m.Semiconductor Science and Technology,19(6),742-746.
MLA	J. Y. Jin,et al."Optimization of InGaAsP-InP tensile strained multiple quantum-well structures emitting at 1.34 mu m".Semiconductor Science and Technology 19.6(2004):742-746.