Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers

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	Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers
	J. Y. Jin; D. C. Tian; J. Shi; T. N. Li
	2004
发表期刊	Infrared Physics & Technology
ISSN	1350-4495
卷号	45 期号:3 页码:209-215
摘要	Effects of well number on temperature characteristics in 1.3-mum InGaAsP-InP multi-quantum-well lasers have been investigated. A smaller well number is suitable for lower threshold current and higher differential quantum efficiency at 25 degreesC, while larger well number produces better performances at 85 degreesC. Furthermore, lasers with a larger well number can achieve a less output power penalty at high temperature. For the first time, a theoretical model has been established to precisely explain the relationship between the characteristic temperature of threshold current and that of external differential efficiency. (C) 2003 Elsevier B.V. All rights reserved.
部门归属	wuhan univ, dept phys, hubei 430072, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. inphenix inc, livermore, ca 94551 usa.;jin, jy (reprint author), wuhan univ, dept phys, hubei 430072, peoples r china;jiny6612@yahoo.com
关键词	Movpe Ingaasp/ingaasp Sl-mqw Well Number Characteristic Temperature Semiconductor Lasers Semiconductor-lasers Dfb Laser Operation Amplifiers Design Gain
URL	查看原文
WOS记录号	WOS:000220784300007
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35390
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Y. Jin,D. C. Tian,J. Shi,et al. Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers[J]. Infrared Physics & Technology,2004,45(3):209-215.
APA	J. Y. Jin,D. C. Tian,J. Shi,&T. N. Li.(2004).Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers.Infrared Physics & Technology,45(3),209-215.
MLA	J. Y. Jin,et al."Study on the effects of well number on temperature characteristics in 1.3-mu m InGaAsP-InP quantum-well lasers".Infrared Physics & Technology 45.3(2004):209-215.