Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers

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	Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers
	J. Y. Jin; D. C. Tian; J. Shi; T. N. Li
	2004
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	19 期号:1 页码:120-126
摘要	Polarization insensitive 13 10 nm InGaAsP-InP multi-quantum-well (MQW) semiconductor optical amplifiers (SOAs), with 7degrees tilted ridge waveguide and buried-window end facets, have been fabricated and fully characterized on chip and module level. SOAs chips with an optimized complex strained MQW active region exhibited less than 1 dB polarization dependence of amplified spontaneous power in the drive current range of 50-200 mA. The amplifier module, having a residual facet reflectivity of 2.8 x 10(-5), achieved 25 dB fibre-to-fibre unsaturated gain, for both transverse electric and transverse magnetic polarization states, 11.2 dBm saturation output power, and 7.6 dB noise figure at 1310 nm. The polarization dependence of gain was less than 0.6 dB in the 3 dB gain bandwidth of 56 nm. Coupling efficiency played a significant role in the gain, saturation output power and noise figure of a SOA module. Spot-size-converter integrated SOAs with buried heterostructures are expected to exhibit further improved performances.
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. inphenix inc, livermore, ca 94551 usa.;jin, jy (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china
关键词	Wavelength Conversion Tensile Transmission Modulation Lasers Fiber Gain
URL	查看原文
WOS记录号	WOS:000220889200023
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35391
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	J. Y. Jin,D. C. Tian,J. Shi,et al. Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers[J]. Semiconductor Science and Technology,2004,19(1):120-126.
APA	J. Y. Jin,D. C. Tian,J. Shi,&T. N. Li.(2004).Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers.Semiconductor Science and Technology,19(1),120-126.
MLA	J. Y. Jin,et al."Fabrication and complete characterization of polarization insensitive 1310 nm InGaAsP-InP quantum-well semiconductor optical amplifiers".Semiconductor Science and Technology 19.1(2004):120-126.