Microstructure and PTCR effect of La-doped BaPbO3 ceramics

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	Microstructure and PTCR effect of La-doped BaPbO3 ceramics
	Z. C. Li; H. Zhang; B. Bergman
	2004
发表期刊	Journal of Materials Science-Materials in Electronics
ISSN	0957-4522
卷号	15 期号:3 页码:183-186
摘要	La-doped BaPbO3 ceramics were prepared by using BaCO3 and PbO. Electrical properties and microstructure of the ceramics were studied. The results show a thin surface layer with a very low resistivity, and the interior of the ceramics with the characteristics of positive temperature coefficient of resistivity (PTCR). The PTCR behavior was related to the La content. The investigation by scanning electron microscopy and transmission electron microscopy revealed that the low resistivity of the surface layer was due to formation of a nano-size BaPbO3 phase with metallic properties. (C) 2004 Kluwer Academic Publishers.
部门归属	royal inst technol, dept mat sci & engn, div ceram, s-10044 stockholm, sweden. chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;li, zc (reprint author), royal inst technol, dept mat sci & engn, div ceram, s-10044 stockholm, sweden;li@mse.kth.se
关键词	Electrical-properties Barium-titanate Phase Decomposition Batio3 System
URL	查看原文
WOS记录号	WOS:000187939000010
引用统计	被引频次：2[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35434
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. C. Li,H. Zhang,B. Bergman. Microstructure and PTCR effect of La-doped BaPbO3 ceramics[J]. Journal of Materials Science-Materials in Electronics,2004,15(3):183-186.
APA	Z. C. Li,H. Zhang,&B. Bergman.(2004).Microstructure and PTCR effect of La-doped BaPbO3 ceramics.Journal of Materials Science-Materials in Electronics,15(3),183-186.
MLA	Z. C. Li,et al."Microstructure and PTCR effect of La-doped BaPbO3 ceramics".Journal of Materials Science-Materials in Electronics 15.3(2004):183-186.