Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs

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	Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs
	Z. C. Li; H. Zhang; Y. B. Xu
	2004
发表期刊	Materials Science in Semiconductor Processing
ISSN	1369-8001
卷号	7 期号:1-2 页码:19-25
摘要	In situ observation of the nucleation and growth stimulated by an electron beam in amorphous GaAs was performed using a high-resolution electron microscopy. The results showed that the crystallization was closely related to the current density of the electron beam. Crystallization could not take place when the current density was 50 pA/cm(2), nanocrystals with the random orientation formed under the 74 pA/cm(2) electron beam, large grains and twining structure formed during the crystallization induced by the 93 pA/cm(2) electron beam. Ionization process and electron-beam heating were suggested to be the possible mechanisms for the irradiation-induced crystallization. (C) 2004 Elsevier Ltd. All rights reserved.
部门归属	royal inst technol, dept mat sci & engn, s-10044 stockholm, sweden. chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;li, zc (reprint author), royal inst technol, dept mat sci & engn, s-10044 stockholm, sweden;zhchli@imr.ac.cn
关键词	Amorphous Gaas Electron Beam Irradiation Crystallization Electron Microscopy Induced Epitaxial Regrowth Silicon Crystallization Ge Irradiation Kinetics Si Amorphization Cazrti2o7 Damage
URL	查看原文
WOS记录号	WOS:000223542600004
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35436
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. C. Li,H. Zhang,Y. B. Xu. Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs[J]. Materials Science in Semiconductor Processing,2004,7(1-2):19-25.
APA	Z. C. Li,H. Zhang,&Y. B. Xu.(2004).Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs.Materials Science in Semiconductor Processing,7(1-2),19-25.
MLA	Z. C. Li,et al."Direct observation of electron-beam-induced nucleation and growth in amorphous GaAs".Materials Science in Semiconductor Processing 7.1-2(2004):19-25.