| Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor | |
| F. S. Liu; Q. L. Liu; J. K. Liang; G. B. Song; L. T. Yang; J. Luo; Y. Q. Zhou; H. W. Dong; G. H. Rao | |
| 2004 | |
| Source Publication | Journal of Materials Research
 |
| ISSN | 0884-2914 |
| Volume | 19Issue:12Pages:3484-3489 |
| Abstract | Gallium nitride (GaN) has been synthesized by reacting gallium trichloride with ammonia (NH(3)) at low temperatures ranging from 500 to 1000 degreesC for 12 h. X-ray diffraction, transmission electron microscopy, infrared, and Raman backscattering spectra revealed that the synthesized GaN powder consists of single-phase nano-sized crystallites with the wurtzite-type structure. The average size of the crystals decreases with the reaction temperature from approximately similar to63 nm at 1000 degreesC to similar to5 nm at 500 degreesC. GaOCl and epsilon-Ga(2)O(3) are the intermediate products during synthesis of the GaN. Characteristic shifts of the Raman peaks are associated with the change in crystal size. The band-edge emission of GaN at 361 nm was observed on room temperature photoluminescence spectra exclusively for the sample synthesized at 1000 degreesC, while a new and broad emission band appeared with the center ranging from 827 to 765 nm for the samples synthesized between 500 and 800 degreesC. |
| description.department | chinese acad sci, inst phys, beijing natl lab condensed matter phys, beijing 100080, peoples r china. sw univ sci & technol, coll mat sci & engn, mianyang 621002, peoples r china. acad sinica, int ctr mat phys, shenyang 110016, peoples r china.;liu, fs (reprint author), chinese acad sci, inst phys, beijing natl lab condensed matter phys, pob 603, beijing 100080, peoples r china;fsliu@aphy.iphy.ac.cn qlliu@aphy.iphy.ac.cn |
| Keyword | Chemical-vapor-deposition Single-crystalline Gan Raman-scattering Phase Epitaxy Thin-films Nitride Layers Nanowires Electron Nitrogen |
| URL | 查看原文 |
| WOS ID | WOS:000225559900006 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/35451 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | F. S. Liu,Q. L. Liu,J. K. Liang,et al. Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor[J]. Journal of Materials Research,2004,19(12):3484-3489. |
| APA | F. S. Liu.,Q. L. Liu.,J. K. Liang.,G. B. Song.,L. T. Yang.,...&G. H. Rao.(2004).Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor.Journal of Materials Research,19(12),3484-3489. |
| MLA | F. S. Liu,et al."Low-temperature synthesis and characterization of GaN nanocrystals from gallium trichloride precursor".Journal of Materials Research 19.12(2004):3484-3489. |
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