Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu

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	Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu
	L. H. Qian; Q. H. Lu; W. J. Kong; K. Lu
	2004
发表期刊	Scripta Materialia
ISSN	1359-6462
卷号	50 期号:11 页码:1407-1411
摘要	Electrical resistivity of grain boundaries (GBs) was determined in nanocrystalline (nc) Cu specimens prepared by magnetosputtering and subsequent annealing. Extrapolating the microstrain dependence of GB resistivity, we derived electrical resistivity of GBs in a fully-relaxed state in Cu, being 2.04 x 10(-16) Omegam(2). (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. chinese acad sci, inst phys, lab extreme condit phys, beijing 100080, peoples r china.;lu, k (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, 72 wenhua rd, shenyang 110016, peoples r china;lu@imr.ac.cn
关键词	Electrical Resistivity Nanocrystalline Cu Relaxation Of Grain Boundary And Magnetron Sputtering Microstructure Evolution Mechanical Attrition Thermal-properties Thin-films Copper Aluminium Fe
URL	查看原文
WOS记录号	WOS:000220683600009
引用统计	被引频次：59[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35515
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. H. Qian,Q. H. Lu,W. J. Kong,et al. Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu[J]. Scripta Materialia,2004,50(11):1407-1411.
APA	L. H. Qian,Q. H. Lu,W. J. Kong,&K. Lu.(2004).Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu.Scripta Materialia,50(11),1407-1411.
MLA	L. H. Qian,et al."Electrical resistivity of fully-relaxed grain boundaries in nanocrystalline Cu".Scripta Materialia 50.11(2004):1407-1411.