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Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state
P. Qin; J. Z. Zhang; Z. Diao
2004
发表期刊Physica B-Condensed Matter
ISSN0921-4526
卷号352期号:1-4页码:127-133
摘要The eliptical, angular, and straight line CdO self-organization aggregates, as well as bush-like crystal clusters were observed on the surfaces of both N <100> and P <111> silicon wafers. The silicon wafers were heated at 580degreesC for 1 h in an evaporation-deposition device. All of the self-organization aggregates deposited on respective ridgelines of the bush-like crystal clusters. The surface defects of both silicon substrates were investigated. The experimental results suggested that the CdO self-organization aggregates were related closely to the topographic condition of the bush-like crystal clusters, and not related directly to the surface defects of the silicon substrates. It testifies to a self-organized critical behaviour of the dynamical system during the vapour-solid phase transition. (C) 2004 Elsevier B.V. All rights reserved.
部门归属acad sinica, int ctr mat phys, shenyang 110015, peoples r china. xinyang normal univ, coll phys & elect engn, dept phys, xinyang 464000, peoples r china. tsing hua univ, dept mat sci & engn, beijing 100084, peoples r china.;zhang, jz (reprint author), acad sinica, int ctr mat phys, shenyang 110015, peoples r china;qingpin0278@vip.sina.com zjz@mail.tsinghua.edu.cn
关键词Cdo Aggregation Patterns Vapour-solid Phase Transition Self-organization Growth
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WOS记录号WOS:000224735100018
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文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35523
专题中国科学院金属研究所
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P. Qin,J. Z. Zhang,Z. Diao. Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state[J]. Physica B-Condensed Matter,2004,352(1-4):127-133.
APA P. Qin,J. Z. Zhang,&Z. Diao.(2004).Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state.Physica B-Condensed Matter,352(1-4),127-133.
MLA P. Qin,et al."Aggregation patterns of micron-scale CdO crystals at interface of vapour-solid state".Physica B-Condensed Matter 352.1-4(2004):127-133.
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