Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe

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	Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe
	X. X. Wu; W. C. Zheng; T. Sheng; H. Zi
	2004
发表期刊	Materials Science and Engineering B-Solid State Materials for Advanced Technology
ISSN	0921-5107
卷号	107 期号:2 页码:186-188
摘要	The anion position parameter chi of NiS4 cluster formed in the ternary semiconductor CuGaS2 by substitution of Ni+ for Cu+ has been determined by studying the optical spectra and EPR data for CuGaS2:Ni+. The result (chi approximate to 0.263(1)) is consistent with the mean value of the X-ray measurement results reported in two groups of references and also with the calculated value obtained from the conservation of tetrahedral bonds (CTB) plus eta = eta(tet) rule (where eta = c/2a). So, we suggest that the anion position parameter chi in pure CuGaS2 crystal is close to the above value obtained by use of Ni+ ion probe. The optical absorption bands and g factors g(parallel to), g(perpendicular to), of CuGaS2: Ni+ are therefore explained reasonably from the anion position parameter. (C) 2003 Elsevier B.V. All rights reserved.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. civil aviat flying inst china, dept phys, guanghan 618307, peoples r china. fudan univ, surface phys lab, natl key lab, shanghai 200433, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china;zhengwe1@163.com
关键词	Structural Parameter Electron Paramagnetic Resonance (Epr) Optical Spectrum Crystal-field Theory Cugas2 Ni++ Chalcopyrite Semiconductors Superposition Model Crystal
URL	查看原文
WOS记录号	WOS:000220274200014
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35640
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. X. Wu,W. C. Zheng,T. Sheng,et al. Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2004,107(2):186-188.
APA	X. X. Wu,W. C. Zheng,T. Sheng,&H. Zi.(2004).Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe.Materials Science and Engineering B-Solid State Materials for Advanced Technology,107(2),186-188.
MLA	X. X. Wu,et al."Studies of the anion position parameter chi of the ternary semiconductor CuGaS2 by use of Ni+ ion probe".Materials Science and Engineering B-Solid State Materials for Advanced Technology 107.2(2004):186-188.