| Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy | |
| W. F. Xiang; H. B. Lu; Z. H. Chen; X. B. Lu; M. He; H. Tian; Y. L. Zhou; C. R. Li; X. L. Ma | |
| 2004 | |
| Source Publication | Journal of Crystal Growth
 |
| ISSN | 0022-0248 |
| Volume | 271Issue:1-2Pages:165-170 |
| Abstract | The LaAlO3 films were grown epitaxially on Si (100) substrates by inserting SrO or SrTiO3 buffer layer using a computer-controlled laser molecular beam epitaxy system. Structural characterization indicated that the LaAlO3 films were two-dimensional layer-by-layer growth. The atomic force microscopy observations showed that the surfaces of the epitaxial LaAlO3 films were atomically smooth. The crystallinity of the LaAlO3 films determined by X-ray diffraction and high-resolution transmission electron microscopy was a single-crystalline structure. After being annealed at 1050 degreesC in N-2 for 5 min, the crystallinity of the LaAlO3 film improved obviously. The successful LaAlO3/SrO/Si and LaAlO3/SrTiO3/Si epitaxial growth predicted that the possibility of the development of 3D heterostructrues on Si in a new generation of microelectronics devices. (C) 2004 Elsevier B.V. All rights reserved. |
| description.department | chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed mat phys, beijing 100080, peoples r china. peking univ, inst microelect, digital dna labs, beijing 100871, peoples r china. chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110015, peoples r china.;xiang, wf (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china;xwf@aphy.iphy.ac.cn zhchen@aphy.iphy.ac.cn |
| Keyword | Annealing Reflection High-energy Electron Diffraction X-ray Diffraction Epitaxial Growth Laser Molecular Beam Epitaxy Laalo3 Film Thin-films Buffer Layers In-situ Srtio3 Si(100) Deposition Silicon Mocvd |
| URL | 查看原文 |
| WOS ID | WOS:000224629300023 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/35650 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | W. F. Xiang,H. B. Lu,Z. H. Chen,et al. Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy[J]. Journal of Crystal Growth,2004,271(1-2):165-170. |
| APA | W. F. Xiang.,H. B. Lu.,Z. H. Chen.,X. B. Lu.,M. He.,...&X. L. Ma.(2004).Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy.Journal of Crystal Growth,271(1-2),165-170. |
| MLA | W. F. Xiang,et al."Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy".Journal of Crystal Growth 271.1-2(2004):165-170. |
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