Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy

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	Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy
	W. F. Xiang; H. B. Lu; Z. H. Chen; X. B. Lu; M. He; H. Tian; Y. L. Zhou; C. R. Li; X. L. Ma
	2004
发表期刊	Journal of Crystal Growth
ISSN	0022-0248
卷号	271 期号:1-2 页码:165-170
摘要	The LaAlO3 films were grown epitaxially on Si (100) substrates by inserting SrO or SrTiO3 buffer layer using a computer-controlled laser molecular beam epitaxy system. Structural characterization indicated that the LaAlO3 films were two-dimensional layer-by-layer growth. The atomic force microscopy observations showed that the surfaces of the epitaxial LaAlO3 films were atomically smooth. The crystallinity of the LaAlO3 films determined by X-ray diffraction and high-resolution transmission electron microscopy was a single-crystalline structure. After being annealed at 1050 degreesC in N-2 for 5 min, the crystallinity of the LaAlO3 film improved obviously. The successful LaAlO3/SrO/Si and LaAlO3/SrTiO3/Si epitaxial growth predicted that the possibility of the development of 3D heterostructrues on Si in a new generation of microelectronics devices. (C) 2004 Elsevier B.V. All rights reserved.
部门归属	chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed mat phys, beijing 100080, peoples r china. peking univ, inst microelect, digital dna labs, beijing 100871, peoples r china. chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110015, peoples r china.;xiang, wf (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china;xwf@aphy.iphy.ac.cn zhchen@aphy.iphy.ac.cn
关键词	Annealing Reflection High-energy Electron Diffraction X-ray Diffraction Epitaxial Growth Laser Molecular Beam Epitaxy Laalo3 Film Thin-films Buffer Layers In-situ Srtio3 Si(100) Deposition Silicon Mocvd
URL	查看原文
WOS记录号	WOS:000224629300023
引用统计	被引频次：25[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35650
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. F. Xiang,H. B. Lu,Z. H. Chen,et al. Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy[J]. Journal of Crystal Growth,2004,271(1-2):165-170.
APA	W. F. Xiang.,H. B. Lu.,Z. H. Chen.,X. B. Lu.,M. He.,...&X. L. Ma.(2004).Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy.Journal of Crystal Growth,271(1-2),165-170.
MLA	W. F. Xiang,et al."Heteroepitaxial growth of LaAlO3 films on Si (100) by laser molecular beam epitaxy".Journal of Crystal Growth 271.1-2(2004):165-170.