Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE

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	Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE
	A. W. Yue; K. Shen; J. Shi; R. F. Wang
	2004
发表期刊	Chinese Physics Letters
ISSN	0256-307X
卷号	21 期号:1 页码:81-83
摘要	We report the improved performance of the conventional contact 1.3 mum GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 mum GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85degreesC, which were the best results for 1.3 mum GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china. wuhan telecommun devices co, wuhan 430074, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;yue, aw (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china;yueaiwen@sohu.com
关键词	10 Gbit/s Operation
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WOS记录号	WOS:000188470900025
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35698
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. W. Yue,K. Shen,J. Shi,et al. Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE[J]. Chinese Physics Letters,2004,21(1):81-83.
APA	A. W. Yue,K. Shen,J. Shi,&R. F. Wang.(2004).Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE.Chinese Physics Letters,21(1),81-83.
MLA	A. W. Yue,et al."Improvement of 1.3-mu m GaInNAs vertical cavity surface emitting lasers grown by MOVPE".Chinese Physics Letters 21.1(2004):81-83.