Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE

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	Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE
	A. W. Yue; K. Shen; R. F. Wang; J. Shi
	2004
发表期刊	Ieee Photonics Technology Letters
ISSN	1041-1135
卷号	16 期号:3 页码:717-719
摘要	The structure of the conventional contact 1.3-mum GaInNAs-GaAs vertical-cavity surface-emitting lasers (VCSELs) was optimized and low threshold current 1.3-mum GaInNAs VCSELs grown by metal-organic vapor-phase epitaxy were reported. The idea is to optimize the active region, the doping profiles, and the pairs of p-distributed Bragg reflectors, and the detuning between the emission wavelength and the photoluminescence gain peak wavelength. The continuous-wave 1.0-mA threshold current was achieved for the single-mode VCSEL. For the multiple-mode VCSELs, the below 2-mA threshold currents at 5 degreesC-85 degreesC, the 1.13-mA threshold current at 55 degreesC, and 1.52-mA threshold current at 85 degreesC are the best results for 1.3-mum GaInNAs VCSELs.
部门归属	wuhan univ, dept phys, wuhan 430072, peoples r china. wuhan telecommun devices co, wuhan 430074, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;yue, aw (reprint author), wuhan univ, dept phys, wuhan 430072, peoples r china;yueaiwen@sohu.com
关键词	Gainnas Low Threshold Current Vertical-cavity Surface-emitting Lasers (Vcsels) Continuous-wave Operation Vertical-cavity Lasers Diodes
URL	查看原文
WOS记录号	WOS:000220018500004
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35699
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. W. Yue,K. Shen,R. F. Wang,et al. Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE[J]. Ieee Photonics Technology Letters,2004,16(3):717-719.
APA	A. W. Yue,K. Shen,R. F. Wang,&J. Shi.(2004).Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE.Ieee Photonics Technology Letters,16(3),717-719.
MLA	A. W. Yue,et al."Low threshold current 1.3-mu m GaInNAsVCSELs grown by MOVPE".Ieee Photonics Technology Letters 16.3(2004):717-719.