Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0.9Al0.1C2 solid solution

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	Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0.9Al0.1C2 solid solution
	H. B. Zhang; Y. C. Zhou; Y. W. Bao; M. S. Li
	2004
发表期刊	Acta Materialia
ISSN	1359-6454
卷号	52 期号:12 页码:3631-3637
摘要	The oxidation behavior of the Ti3Si0.9Al0.1C2 solid solution in air was investigated at 1000-1350 degreesC. The parabolic rate constants of Ti3Si0.9Al0.1C2 were decreased by 2-4 orders of magnitude compared with those of Ti3SiC2 at 1000-1300 degreesC. At 1000-1100 degreesC, the oxide scales displayed a continuous alpha-Al-2-O-3 inner layer and a discontinuous TiO2 (rutile) outer layer. At 1200-1300 degreesC, the continuous inner layer was still alpha-Al2O3, but the outer layer was a mixture of TiO2 (rutile) and Al2TiO5. The oxide layers were dense, adherent and resistant to thermal cycling. However, the oxidation resistance of Ti3Si0.9Al0.1C2 deteriorated at 1350 degreesC because of the depletion of alpha-Al2O3. This depletion was caused by the extensive reaction between TiO2 (rutile) and alpha-Al2O3 to form Al2TiO5. The high activity and diffusion of Al and the low solubility of oxygen in the solid solution were the key factors for the formation of a continuous alpha-Al2O3 layer during high-temperature oxidation. (C) 2004 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
部门归属	chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china.;zhou, yc (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, 72 wenhua rd, shenyang 110016, peoples r china;yczhou@imr.ac.cn
关键词	Ceramics Oxidation Layered Structures Activity Solid Solution High-temperature Mechanical-properties Silicon-nitride Si3n4-tin Composites Behavior Air Ceramics Ti3alc2 Powders Si
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WOS记录号	WOS:000222707800023
引用统计	被引频次：121[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35708
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. B. Zhang,Y. C. Zhou,Y. W. Bao,et al. Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0.9Al0.1C2 solid solution[J]. Acta Materialia,2004,52(12):3631-3637.
APA	H. B. Zhang,Y. C. Zhou,Y. W. Bao,&M. S. Li.(2004).Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0.9Al0.1C2 solid solution.Acta Materialia,52(12),3631-3637.
MLA	H. B. Zhang,et al."Improving the oxidation resistance of Ti3SiC2 by forming a Ti3Si0.9Al0.1C2 solid solution".Acta Materialia 52.12(2004):3631-3637.