Micron-scale deformation and damage mechanisms of Ti3SiC2 crystals induced by indentation

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	Micron-scale deformation and damage mechanisms of Ti3SiC2 crystals induced by indentation
	Z. F. Zhang; Z. M. Sun; H. Zhang; H. Hashimoto
	2004
发表期刊	Advanced Engineering Materials
ISSN	0935-9648
卷号	6 期号:12 页码:980-983
部门归属	chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. aist tohoku, natl inst adv ind sci & technol, miyagino ku, sendai, miyagi 9838551, japan.;zhang, zf (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, wenhua rd 72, shenyang 110016, peoples r china;zhfzhang@imr.ac.cn
关键词	Discharge Sintering Technique Contact Damage Grain-size Temperature Fabrication Powders Hip
URL	查看原文
WOS记录号	WOS:000226380200012
引用统计	被引频次：24[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35737
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. F. Zhang,Z. M. Sun,H. Zhang,et al. Micron-scale deformation and damage mechanisms of Ti3SiC2 crystals induced by indentation[J]. Advanced Engineering Materials,2004,6(12):980-983.
APA	Z. F. Zhang,Z. M. Sun,H. Zhang,&H. Hashimoto.(2004).Micron-scale deformation and damage mechanisms of Ti3SiC2 crystals induced by indentation.Advanced Engineering Materials,6(12),980-983.
MLA	Z. F. Zhang,et al."Micron-scale deformation and damage mechanisms of Ti3SiC2 crystals induced by indentation".Advanced Engineering Materials 6.12(2004):980-983.