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On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites
M. J. Zhao; Y. Liu; L. Q. Chen; J. Bi
2004
发表期刊Journal of Materials Science & Technology
ISSN1005-0302
卷号20期号:4页码:451-453
摘要In the present study, the modified continuum model, quench strengthening and dislocation pile-up model was respectively used to estimate the yield strength of SiCp/Al composites. The experimental results showed that the modified shear lag model or quench strengthening model would underestimate the yield strength of SiCp/Al composites. However, the modified Hall-Petch correlation on the basis of the dislocation pile-up model, expressed as sigma(cy) = 244 + 371lambda(-1/2), fitted very well with the experimental data, which indicated that the strength increase of SiCp/Al composites might be due to the direct blocking of dislocation motion by the particulate-matrix interface. Namely, the dislocation pile-up is the most possible strengthening mechanism for SiCp/Al composites.
部门归属chinese acad sci, inst met res, shenyang 110016, peoples r china.;zhao, mj (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china;mjzhao@imr.ac.cn
关键词Silicon Carbide Particulate Composites Shear Lag Model Quench Strengthening Model Dislocation Pile-up Model Hall-petch Correlation Dislocation Generation Aging Behavior Fracture Fiber Deformation
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WOS记录号WOS:000222973600022
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35742
专题中国科学院金属研究所
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GB/T 7714
M. J. Zhao,Y. Liu,L. Q. Chen,et al. On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites[J]. Journal of Materials Science & Technology,2004,20(4):451-453.
APA M. J. Zhao,Y. Liu,L. Q. Chen,&J. Bi.(2004).On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites.Journal of Materials Science & Technology,20(4),451-453.
MLA M. J. Zhao,et al."On the strength of silicon carbide particulate reinforced aluminium alloy matrix composites".Journal of Materials Science & Technology 20.4(2004):451-453.
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