Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC

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	Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC
	X. D. Chen; S. Fung; C. C. Ling; C. D. Beling; M. Gong
	2003
发表期刊	Journal of Applied Physics
ISSN	0021-8979
卷号	94 期号:5 页码:3004-3010
摘要	Deep level transient spectroscopy has been employed to study the deep level defects introduced in n-type 6H-SiC after neutron irradiation. Deep levels situated at E-C-0.23, E-C-0.36/0.44, E-C-0.50, and E-C-0.62/0.68 eV have been detected in the temperature range of 100-450 K, which have been identified with the previously reported deep levels ED1, E-1/E-2, E-i, and Z(1)/Z(2), respectively. Thermal annealing studies of these deep levels reveal that ED1 and E-i anneal at a temperature below 350degreesC, the Z(1)/Z(2) levels anneal out at 900degreesC, while the intensity of the E-1/E-2 peaks is increased with annealing temperature, reaching a maximum at about 500-750degreesC, and finally annealing out at 1400degreesC. The possible nature of the deep levels ED1, E-1/E-2, E-i, and Z(1)/Z(2) are discussed in the context of their annealing behavior. Upon further annealing at 1600degreesC, four deep levels labeled NE1 at E-C-0.44 eV, NE2 E-C-0.53 eV, NE3 E-C-0.64 eV, and NE4 E-C-0.68 eV are produced. Evidence is given that these levels are different in their origin to E-1/E-2 and Z(1)/Z(2). (C) 2003 American Institute of Physics.
部门归属	univ hong kong, dept phys, hong kong, hong kong, peoples r china. sichuan univ, dept phys, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;chen, xd (reprint author), univ hong kong, dept phys, pokfulam rd, hong kong, hong kong, peoples r china
关键词	6h Silicon-carbide Positron-annihilation Defect Centers
URL	查看原文
WOS记录号	WOS:000184844200031
引用统计	被引频次：28[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35801
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. D. Chen,S. Fung,C. C. Ling,et al. Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC[J]. Journal of Applied Physics,2003,94(5):3004-3010.
APA	X. D. Chen,S. Fung,C. C. Ling,C. D. Beling,&M. Gong.(2003).Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC.Journal of Applied Physics,94(5),3004-3010.
MLA	X. D. Chen,et al."Deep level transient spectroscopic study of neutron-irradiated n-type 6H-SiC".Journal of Applied Physics 94.5(2003):3004-3010.