| Superperiodic feature on silicon-sputtered highly oriented pyrolytic graphite | |
| G. P. Dai; T. S. Xie; H. M. Cheng; H. Q. Ye | |
| 2003 | |
| Source Publication | Journal of Materials Science & Technology
 |
| ISSN | 1005-0302 |
| Volume | 19Issue:3Pages:246-248 |
| Abstract | Superperiodic feature was observed by scanning tunneling microscopy (STM) on the surface of highly oriented pyrolytic graphite (HOPG) on which silicon was sputtered. The superlattice was analyzed by the moire pattern hypothesis, and the lattice constant is 7.03 nm. For the superlattice, the observed boundaries between the superlattice and the normal graphite areas were zigzag, which was in good agreement with the result predicted theoretically. In addition, the observed lattice constants varied slightly in the superperiodic feature area. This implies the role of intralayer strain in the formation of the observed superlattice on the graphite surface. |
| description.department | chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china.;cheng, hm (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china |
| Keyword | Highly Oriented Graphite Scanning Tunneling Microscopy Superlattice Silicon Scanning-tunneling-microscopy Images |
| URL | 查看原文 |
| WOS ID | WOS:000183282000015 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/35805 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | G. P. Dai,T. S. Xie,H. M. Cheng,et al. Superperiodic feature on silicon-sputtered highly oriented pyrolytic graphite[J]. Journal of Materials Science & Technology,2003,19(3):246-248. |
| APA | G. P. Dai,T. S. Xie,H. M. Cheng,&H. Q. Ye.(2003).Superperiodic feature on silicon-sputtered highly oriented pyrolytic graphite.Journal of Materials Science & Technology,19(3),246-248. |
| MLA | G. P. Dai,et al."Superperiodic feature on silicon-sputtered highly oriented pyrolytic graphite".Journal of Materials Science & Technology 19.3(2003):246-248. |
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