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High temperature oxidation behavior of a sputtered pure Ni nanocrystalline coating at 700-900 degrees C
S. J. Geng; F. H. Wang; S. Zhang
2003
发表期刊Surface & Coatings Technology
ISSN0257-8972
卷号167期号:2-3页码:212-216
摘要A nanocrystalline coating of Ni was deposited on a pure Ni substrate via magnetron sputtering. The oxidation behavior of the Ni substrate and the nanocrystalline coating was studied in air at 700-900degreesC. The samples were examined by scanning tunneling microscopy, scanning electron microscopy with energy dispersive X-ray and X-ray diffraction. The mass gain in the coated sample was higher than that without the coating. The study showed that the nanocrystallization in pure Ni promoted oxidation during early stage, after that, the oxidation rates are about the same in samples with or without the nanocrystalline layer. The oxidation mechanism was also discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
部门归属nanyang technol univ, sch mech & prod engn, singapore 639798, singapore. chinese acad sci, state key lab corros & protect, inst met res, shenyang 110016, peoples r china.;geng, sj (reprint author), nanyang technol univ, sch mech & prod engn, 50 nanyang ave, singapore 639798, singapore
关键词Pure Ni Sputtering Nanocrystalline Coating Oxidation Corrosion-resistance Selective Oxidation K38g Alloy Superalloy Oxygen
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WOS记录号WOS:000181894700018
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被引频次:28[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35836
专题中国科学院金属研究所
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S. J. Geng,F. H. Wang,S. Zhang. High temperature oxidation behavior of a sputtered pure Ni nanocrystalline coating at 700-900 degrees C[J]. Surface & Coatings Technology,2003,167(2-3):212-216.
APA S. J. Geng,F. H. Wang,&S. Zhang.(2003).High temperature oxidation behavior of a sputtered pure Ni nanocrystalline coating at 700-900 degrees C.Surface & Coatings Technology,167(2-3),212-216.
MLA S. J. Geng,et al."High temperature oxidation behavior of a sputtered pure Ni nanocrystalline coating at 700-900 degrees C".Surface & Coatings Technology 167.2-3(2003):212-216.
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