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Concentration of point defects in binary NiAl
Y. L. Hao; Y. Song; R. Yang; Y. Y. Cui; D. Li; M. Niinomi
2003
Source PublicationPhilosophical Magazine Letters
ISSN0950-0839
Volume83Issue:6Pages:375-384
AbstractA mean-field-type model was established to describe the concentration of point defects in binary NiAl by taking into account the effects of crystal expansion and off-stoichiometry. Different from some recent studies, this analysis shows that constitutional vacancies are present only in Al-rich NiAl at T = 0 K but that the vacancy concentration decreases with increasing temperature until diffusion is activated and thereafter becomes nearly independent of temperature. Such vacancy formation behaviour in Al-rich NiAl belongs to the category of metastable constitutional type according to a method of classifying vacancy formation in B2 crystals proposed in this letter.
description.departmentchinese acad sci, inst met res, titanium alloy lab, shenyang 110016, peoples r china. univ london, dept mat, london e1 4ns, england. toyohashi univ technol, dept prod syst engn, toyohashi, aichi 4418580, japan.;hao, yl (reprint author), chinese acad sci, inst met res, titanium alloy lab, 72 wenhua rd, shenyang 110016, peoples r china
KeywordIntermetallic Compound Feal High-temperature Region Long-range Order Vacancies Behavior Alloys Phase Al
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WOS IDWOS:000184452700004
Citation statistics
Cited Times:5[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.imr.ac.cn/handle/321006/35844
Collection中国科学院金属研究所
Recommended Citation
GB/T 7714
Y. L. Hao,Y. Song,R. Yang,et al. Concentration of point defects in binary NiAl[J]. Philosophical Magazine Letters,2003,83(6):375-384.
APA Y. L. Hao,Y. Song,R. Yang,Y. Y. Cui,D. Li,&M. Niinomi.(2003).Concentration of point defects in binary NiAl.Philosophical Magazine Letters,83(6),375-384.
MLA Y. L. Hao,et al."Concentration of point defects in binary NiAl".Philosophical Magazine Letters 83.6(2003):375-384.
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