Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications | |
J. M. Liu; N. Chong; H. L. W. Chan; K. H. Wong; C. L. Choy | |
2003 | |
发表期刊 | Applied Physics a-Materials Science & Processing
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ISSN | 0947-8396 |
卷号 | 76期号:1页码:93-96 |
摘要 | Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction theta-2theta scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 mum thick AlN film on a (111) Si substrate is observed using an interdigital electrode. |
部门归属 | nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn |
关键词 | Thin-films Growth Aln |
URL | 查看原文 |
WOS记录号 | WOS:000180701200017 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/35923 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | J. M. Liu,N. Chong,H. L. W. Chan,et al. Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications[J]. Applied Physics a-Materials Science & Processing,2003,76(1):93-96. |
APA | J. M. Liu,N. Chong,H. L. W. Chan,K. H. Wong,&C. L. Choy.(2003).Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications.Applied Physics a-Materials Science & Processing,76(1),93-96. |
MLA | J. M. Liu,et al."Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications".Applied Physics a-Materials Science & Processing 76.1(2003):93-96. |
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