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Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications
J. M. Liu; N. Chong; H. L. W. Chan; K. H. Wong; C. L. Choy
2003
发表期刊Applied Physics a-Materials Science & Processing
ISSN0947-8396
卷号76期号:1页码:93-96
摘要Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction theta-2theta scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 mum thick AlN film on a (111) Si substrate is observed using an interdigital electrode.
部门归属nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china. hong kong polytech univ, dept appl phys, hong kong, hong kong, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china.;liu, jm (reprint author), nanjing univ, solid state microstruct lab, nanjing 210093, peoples r china;liujm@nju.edu.cn
关键词Thin-films Growth Aln
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WOS记录号WOS:000180701200017
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被引频次:13[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/35923
专题中国科学院金属研究所
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J. M. Liu,N. Chong,H. L. W. Chan,et al. Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications[J]. Applied Physics a-Materials Science & Processing,2003,76(1):93-96.
APA J. M. Liu,N. Chong,H. L. W. Chan,K. H. Wong,&C. L. Choy.(2003).Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications.Applied Physics a-Materials Science & Processing,76(1),93-96.
MLA J. M. Liu,et al."Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications".Applied Physics a-Materials Science & Processing 76.1(2003):93-96.
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