In-plane magnetic anisotropy in RF sputtered Fe-N thin films

IMR OpenIR

	In-plane magnetic anisotropy in RF sputtered Fe-N thin films; In-plane magnetic anisotropy in RF sputtered Fe-N thin films
	H. B. Nie; S. Y. Xu; C. K. Ong; Q. Zhan; D. X. Li; J. P. Wang
	2003 ; 2003
发表期刊	Thin Solid Films ; Thin Solid Films
ISSN	0040-6090 ; 0040-6090
卷号	440 期号:1-2 页码:35-40
摘要	We have fabricated Fe(N) thin films with varied N-2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N-2 partial pressure, Fe(N) films showed a basic bcc alpha-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the alpha-Fe grains and inducing uniaxial anisotropy. (C) 2003 Elsevier Science B.V. All rights reserved.; We have fabricated Fe(N) thin films with varied N-2 partial pressure and studied the microstructure, morphology, magnetic properties and resistivity by using X-ray diffraction, atomic force microscopy, transmission electron microscopy, vibrating-sample magnetometer and angle-resolved M-H hysteresis Loop tracer and standard four-point probe method. In the presence of low N-2 partial pressure, Fe(N) films showed a basic bcc alpha-Fe structure with a preferred (110) texture. A variation of in-plane magnetic anisotropy of the Fe(N) films was observed with the changing of N component. The evolution of in-plane anisotropy in the films was attributed to the directional order mechanism. Nitrogen atoms play an important role in refining the alpha-Fe grains and inducing uniaxial anisotropy. (C) 2003 Elsevier Science B.V. All rights reserved.
部门归属	natl univ singapore, ctr superconducting & magnet mat, inst engn sci, singapore 117542, singapore. natl univ singapore, dept phys, singapore 117542, singapore. chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china. data storage inst, singapore 117608, singapore.;nie, hb (reprint author), natl univ singapore, ctr superconducting & magnet mat, inst engn sci, 2 sci dr 3, singapore 117542, singapore ; natl univ singapore, ctr superconducting & magnet mat, inst engn sci, singapore 117542, singapore. natl univ singapore, dept phys, singapore 117542, singapore. chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china. data storage inst, singapore 117608, singapore.;nie, hb (reprint author), natl univ singapore, ctr superconducting & magnet mat, inst engn sci, 2 sci dr 3, singapore 117542, singapore
关键词	Magnetic Anisotropy Magnetic Anisotropy Directional Order Directional Order Iron Iron Nitrides Nitrides Iron-nitride Films Iron-nitride Films Uniaxial Anisotropy Uniaxial Anisotropy Soft Magnetism Soft Magnetism Deposition Deposition
URL	查看原文 ; 查看原文
WOS记录号	WOS:000184951300006 ; WOS:000184951300006
引用统计	被引频次：25[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/35972
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	H. B. Nie,S. Y. Xu,C. K. Ong,et al. In-plane magnetic anisotropy in RF sputtered Fe-N thin films, In-plane magnetic anisotropy in RF sputtered Fe-N thin films[J]. Thin Solid Films, Thin Solid Films,2003, 2003,440, 440(1-2):35-40, 35-40.
APA	H. B. Nie,S. Y. Xu,C. K. Ong,Q. Zhan,D. X. Li,&J. P. Wang.(2003).In-plane magnetic anisotropy in RF sputtered Fe-N thin films.Thin Solid Films,440(1-2),35-40.
MLA	H. B. Nie,et al."In-plane magnetic anisotropy in RF sputtered Fe-N thin films".Thin Solid Films 440.1-2(2003):35-40.