Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide

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	Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide
	G. G. Qin; Y. J. Li
	2003
发表期刊	Physical Review B
ISSN	1098-0121
卷号	68 期号:8
摘要	There is much debate about the photoluminescence (PL) mechanisms of the nanoscale Si/Si oxide systems containing oxidized porous silicon and a nanoscale-Si-particle (NSP)-embedded Si oxide deposited by chemical vapor deposition, sputtering, or Si-ion implanting into Si oxide. In this paper, we suggest that two competitive processes, namely, the quantum confinement (QC) process and the quantum confinement-luminescence center (QCLC) process, take place in the PL. The photoexcitation occurs in the NSPs for both of the processes, while the photoemission occurs either in the NSPs for the QC process or in the luminescence centers (LCs) in Si oxide adjacent to the NSPs for the QCLC process. The rates of the two processes are compared quantitatively. Which process plays the major role in PL is determined by the capture cross section, the luminescence efficiency, and the density of the LCs, and the sizes of the NSPs. For a nanoscale Si/Si oxide system with the LCs having certain capture cross-section and luminescence efficiency, the higher the LC density and the larger the sizes of NSPs, the more beneficial for the QCLC process to surpass the QC process, and vice versa. For certain LC parameters, there is a critical most probable size for the NSPs. When the most probable size of the NSPs is larger than the critical one, the QCLC process dominates the PL, and when the most probable size of the NSPs is smaller than the critical one, the QC process dominates the PL. When the most probable size of the NSPs is close to the critical one, both the QC and QCLC processes should be taken into account. We have used this model to discuss PL experimental results reported for some nanoscale Si/Si oxide systems.
部门归属	peking univ, dept phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), peking univ, dept phys, beijing 100871, peoples r china
关键词	Luminescence Center Model Capture Cross-section Si Emission Layers Nanocrystals Oxidation Oxygen
URL	查看原文
WOS记录号	WOS:000185287500041
引用统计	被引频次：96[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36002
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	G. G. Qin,Y. J. Li. Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide[J]. Physical Review B,2003,68(8).
APA	G. G. Qin,&Y. J. Li.(2003).Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide.Physical Review B,68(8).
MLA	G. G. Qin,et al."Photoluminescence mechanism model for oxidized porous silicon and nanoscale-silicon-particle-embedded silicon oxide".Physical Review B 68.8(2003).