| Formation of copper silicides by high dose metal vapor vacuum arc ion implantation | |
| C. Rong; J. H. Zhang; W. Z. Li | |
| 2003 | |
| Source Publication | Applied Surface Science
 |
| ISSN | 0169-4332 |
| Volume | 220Issue:1-4Pages:40-45 |
| Abstract | Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 degreesC, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper-silicon interface that was applied in conventional studies of copper-silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD). (C) 2003 Elsevier B.V. All rights reserved. |
| description.department | tsing hua univ, sch mat res, dept mat sci & engn, beijing 100084, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. tsing hua univ, state key lab tribol, beijing 100084, peoples r china.;zhang, jh (reprint author), tsing hua univ, sch mat res, dept mat sci & engn, haidian dist, beijing 100084, peoples r china |
| Keyword | Copper Silicides Ion implantatIon Defects Silicon System Diffusion Cu3si |
| URL | 查看原文 |
| WOS ID | WOS:000187721600007 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.imr.ac.cn/handle/321006/36014 |
| Collection | 中国科学院金属研究所 |
| Recommended Citation GB/T 7714 | C. Rong,J. H. Zhang,W. Z. Li. Formation of copper silicides by high dose metal vapor vacuum arc ion implantation[J]. Applied Surface Science,2003,220(1-4):40-45. |
| APA | C. Rong,J. H. Zhang,&W. Z. Li.(2003).Formation of copper silicides by high dose metal vapor vacuum arc ion implantation.Applied Surface Science,220(1-4),40-45. |
| MLA | C. Rong,et al."Formation of copper silicides by high dose metal vapor vacuum arc ion implantation".Applied Surface Science 220.1-4(2003):40-45. |
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