Formation of copper silicides by high dose metal vapor vacuum arc ion implantation

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	Formation of copper silicides by high dose metal vapor vacuum arc ion implantation
	C. Rong; J. H. Zhang; W. Z. Li
	2003
发表期刊	Applied Surface Science
ISSN	0169-4332
卷号	220 期号:1-4 页码:40-45
摘要	Si(1 1 1) was implanted by copper ions with different doses and copper distribution in silicon matrix was obtained. The as-implanted samples were annealed at 300 and 540 degreesC, respectively. Formation of copper silicides in as-implanted and annealed samples were studied. Thermodynamics and kinetics of the reaction were found to be different from reaction at copper-silicon interface that was applied in conventional studies of copper-silicon interaction. The defects in silicon induced by implantation and formation of copper silicides were recognized by Si(2 2 2) X-ray diffraction (XRD). (C) 2003 Elsevier B.V. All rights reserved.
部门归属	tsing hua univ, sch mat res, dept mat sci & engn, beijing 100084, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china. tsing hua univ, state key lab tribol, beijing 100084, peoples r china.;zhang, jh (reprint author), tsing hua univ, sch mat res, dept mat sci & engn, haidian dist, beijing 100084, peoples r china
关键词	Copper Silicides Ion implantatIon Defects Silicon System Diffusion Cu3si
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WOS记录号	WOS:000187721600007
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36014
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. Rong,J. H. Zhang,W. Z. Li. Formation of copper silicides by high dose metal vapor vacuum arc ion implantation[J]. Applied Surface Science,2003,220(1-4):40-45.
APA	C. Rong,J. H. Zhang,&W. Z. Li.(2003).Formation of copper silicides by high dose metal vapor vacuum arc ion implantation.Applied Surface Science,220(1-4),40-45.
MLA	C. Rong,et al."Formation of copper silicides by high dose metal vapor vacuum arc ion implantation".Applied Surface Science 220.1-4(2003):40-45.