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Crystallographic cracking behavior in silicon single crystal wafer
J. Tan; S. X. Li; Y. Wan; F. Li; K. Lu
2003
发表期刊Materials Science and Engineering B-Solid State Materials for Advanced Technology
ISSN0921-5107
卷号103期号:1页码:49-56
摘要Crystallographic cracking behavior was studied on three-point-bending specimens of silicon single-crystal wafer having (1(1) over bar 0) [11(2) over bar] -oriented precrack. Crystallographic cracking occurred on alternating {111} planes after traversing about 500 mum from crack front at the brittle-ductile-transition temperature, and the main crack was almost parallel to the loading axis. The preferentially activated slip systems ahead of the crack tip resulted in the characteristic fracture in the specimens. The experimental results could be well explained by calculating the shear stress on all possible tetrahedral slip planes around the crack tip. (C) 2003 Elsevier B.V. All rights reserved.
部门归属chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china. chinese acad sci, met res inst, state key lab corros & protect, shenyang 110016, peoples r china.;tan, j (reprint author), chinese acad sci, met res inst, shenyang natl lab mat sci, shenyang 110016, peoples r china;jtan@imr.ac.cn
关键词Brittle-ductile-transition Three-point Bending Silicon Crack Cross-slip Zone To-ductile Transition Fatigue Model
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WOS记录号WOS:000185248700008
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被引频次:8[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/36026
专题中国科学院金属研究所
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GB/T 7714
J. Tan,S. X. Li,Y. Wan,et al. Crystallographic cracking behavior in silicon single crystal wafer[J]. Materials Science and Engineering B-Solid State Materials for Advanced Technology,2003,103(1):49-56.
APA J. Tan,S. X. Li,Y. Wan,F. Li,&K. Lu.(2003).Crystallographic cracking behavior in silicon single crystal wafer.Materials Science and Engineering B-Solid State Materials for Advanced Technology,103(1),49-56.
MLA J. Tan,et al."Crystallographic cracking behavior in silicon single crystal wafer".Materials Science and Engineering B-Solid State Materials for Advanced Technology 103.1(2003):49-56.
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