Simulations of temperature field in HFCVD diamond films over large area

IMR OpenIR

	Simulations of temperature field in HFCVD diamond films over large area; Simulations of temperature field in HFCVD diamond films over large area
	A. Y. Wang; C. Sun; R. F. Huang; L. S. Wen
	2003 ; 2003
发表期刊	Journal of Materials Science & Technology ; Journal of Materials Science & Technology
ISSN	1005-0302 ; 1005-0302
卷号	19 期号:1 页码:22-26
摘要	A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapor deposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filaments number, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filaments arrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm x 76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm x 80 mm hot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm x 100 mm under the condition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for specially optimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.; A three-dimensional model was developed to investigate the influence of various hot filaments parameters on substrate temperature fields that significantly affect the nucleation and growth of diamond films over large area by hot-filament chemical vapor deposition (HFCVD). Numerical simulated results indicated that substrate temperature varies as a function of hot filaments number, radius, temperature, emissivity, the distance between filaments, and the distance between substrate and filaments arrangement plane. When these filaments parameters were maintained at the optimal values, the homogeneous substrate temperature region of 76 mm x 76 mm with the temperature fluctuation no more than 5% could be obtained by a 80 mm x 80 mm hot filaments arrangement plane. Furthermore, the homogeneous region could be enlarged to 100 mm x 100 mm under the condition of supplementary hot filaments with appropriate parameters. All of these calculations provided the basis for specially optimizing the hot filaments parameters to deposit uniform diamond film over large area by HFCVD.
部门归属	chinese acad sci, inst met res, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china ; chinese acad sci, inst met res, shenyang 110016, peoples r china.;sun, c (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china
关键词	Hfcvd Hfcvd Diamond Film Diamond Film Temperature Field Temperature Field Simulation Simulation Chemical Vapor-deposition Chemical Vapor-deposition Heat-transfer Heat-transfer Growth Growth Plasma Plasma Phase Phase Gas Gas
URL	查看原文 ; 查看原文
WOS记录号	WOS:000180691100007 ; WOS:000180691100007
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36033
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	A. Y. Wang,C. Sun,R. F. Huang,et al. Simulations of temperature field in HFCVD diamond films over large area, Simulations of temperature field in HFCVD diamond films over large area[J]. Journal of Materials Science & Technology, Journal of Materials Science & Technology,2003, 2003,19, 19(1):22-26, 22-26.
APA	A. Y. Wang,C. Sun,R. F. Huang,&L. S. Wen.(2003).Simulations of temperature field in HFCVD diamond films over large area.Journal of Materials Science & Technology,19(1),22-26.
MLA	A. Y. Wang,et al."Simulations of temperature field in HFCVD diamond films over large area".Journal of Materials Science & Technology 19.1(2003):22-26.