Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films

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	Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films; Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films
	C. J. Yang; M. Zhang; Z. D. Zhang
	2003 ; 2003
发表期刊	Journal of the Korean Physical Society ; Journal of the Korean Physical Society
ISSN	0374-4884 ; 0374-4884
卷号	43 期号:5 页码:762-768
摘要	Magnetic transport phenomena in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN(3 nm)/Co(t nm)]...(10) with t(Co) = 1.0 similar to 2.0 nm have been investigated. The nanostructures and tunneling magnetic resistance of the samples are strongly dependent on the thickness of the Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in an amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR, value of Deltarho/rho(0) = 3.5%. As t(Co) increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. The tunneling barrier "decay length for tunneling" for films having a Co layer thickness from 1.4 to 1.6 nm was measured to be in the range from 0.004 to 0.021 Angstrom(-1). An enhanced TMR. was observed after annealing which is subscribed to an increase of about 100% in activation energy for tunneling.; Magnetic transport phenomena in rf sputtered AlN/Co type ten-layered discontinuous films of nanoscaled [AlN(3 nm)/Co(t nm)]...(10) with t(Co) = 1.0 similar to 2.0 nm have been investigated. The nanostructures and tunneling magnetic resistance of the samples are strongly dependent on the thickness of the Co layer. Negative tunneling magneto-resistance due to the spin-dependent transport has been observed along the current-in-plane configuration in the samples having the Co layers below 1.6 nm thick. When the thickness of Co layer was less than 1.2 nm, randomly oriented granular Co particles were completely isolated and embedded in an amorphous AlN matrix, and the films showed the superparamagnetic behavior with a high MR, value of Deltarho/rho(0) = 3.5%. As t(Co) increases, a transition from the regime of co-existence of superparamagnetic and ferromagnetic behaviors to ferromagnetic behavior was observed. The tunneling barrier "decay length for tunneling" for films having a Co layer thickness from 1.4 to 1.6 nm was measured to be in the range from 0.004 to 0.021 Angstrom(-1). An enhanced TMR. was observed after annealing which is subscribed to an increase of about 100% in activation energy for tunneling.
部门归属	res inst ind sci & technol, electromag mat lab, pohang 790330, south korea. acad sinica, inst met res, shenyang 110016, peoples r china.;yang, cj (reprint author), res inst ind sci & technol, electromag mat lab, pohang 790330, south korea;cjyang@rist.re.kr minzhang@imr.ac.cn ; res inst ind sci & technol, electromag mat lab, pohang 790330, south korea. acad sinica, inst met res, shenyang 110016, peoples r china.;yang, cj (reprint author), res inst ind sci & technol, electromag mat lab, pohang 790330, south korea;cjyang@rist.re.kr minzhang@imr.ac.cn
关键词	Tunneling Tunneling Spindependent Spindependent Cluster Cluster Giant Magnetoresistance Giant Magnetoresistance Multilayers Multilayers Ferromagnets Ferromagnets Transport Transport Junctions Junctions
URL	查看原文 ; 查看原文
WOS记录号	WOS:000186615100024 ; WOS:000186615100024
引用统计	被引频次：8[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36103
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	C. J. Yang,M. Zhang,Z. D. Zhang. Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films, Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films[J]. Journal of the Korean Physical Society, Journal of the Korean Physical Society,2003, 2003,43, 43(5):762-768, 762-768.
APA	C. J. Yang,M. Zhang,&Z. D. Zhang.(2003).Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films.Journal of the Korean Physical Society,43(5),762-768.
MLA	C. J. Yang,et al."Tunneling magnetoresistance of Co granules in AIN/Co/AIN type discontinuous films".Journal of the Korean Physical Society 43.5(2003):762-768.