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Magnetic and electronic transport properties of Pr5Ge4 compound
H. F. Yang; G. H. Rao; G. Y. Liu; Z. W. Ouyang; X. M. Feng; W. F. Liu; W. G. Chu; J. K. Liang
2003
发表期刊Physica Status Solidi a-Applied Research
ISSN0031-8965
卷号198期号:1页码:156-161
摘要The magnetic and electronic transport properties of the compound Pr5Ge4 were investigated by means of magnetic and electrical resistivity measurements. The results indicate that for the compound Pr5Ge4 there are two magnetic transitions at T-C(I) = 25 K and T-C(II) = 41 K in a low field of 500 Oe. In analogy to Nd5Ge4 compound, the magnetic structure of Pr5Ge4 may be a canted one, which can be induced by a competition between nearest-neighbor Pr-Pr ferromagnetic (FM) and Pr-Pr antiferromagnetic (AFM) exchange interactions. The main contribution to the electrical resistivity of Pr5Ge4 is the scattering of conduction electrons on localized magnetic moments. A large magnetoresistance (Deltarho/rho) was observed (about 25% at 24 K and 15% at 40 K) in the presence of a magnetic field of 50 kOe.
部门归属chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, dept condensed matter phys, beijing 100080, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;rao, gh (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china
关键词Electrical-resistance Gd-5(Si2ge2) Transition Nd5ge4 Field
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WOS记录号WOS:000184662900020
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被引频次:2[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/36106
专题中国科学院金属研究所
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H. F. Yang,G. H. Rao,G. Y. Liu,et al. Magnetic and electronic transport properties of Pr5Ge4 compound[J]. Physica Status Solidi a-Applied Research,2003,198(1):156-161.
APA H. F. Yang.,G. H. Rao.,G. Y. Liu.,Z. W. Ouyang.,X. M. Feng.,...&J. K. Liang.(2003).Magnetic and electronic transport properties of Pr5Ge4 compound.Physica Status Solidi a-Applied Research,198(1),156-161.
MLA H. F. Yang,et al."Magnetic and electronic transport properties of Pr5Ge4 compound".Physica Status Solidi a-Applied Research 198.1(2003):156-161.
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