Gaseous nitriding process of surface nano crystallized (SNCed) steel | |
D. H. Bei; J. F. Gu; J. S. Pan; J. Lu; K. Lu | |
2002 | |
发表期刊 | Journal of Materials Science & Technology
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ISSN | 1005-0302 |
卷号 | 18期号:6页码:566-568 |
摘要 | The behavior of gaseous nitriding on the surface nanocrystallized (SNCed) steel was investigated. The mild steel discs were SNCed on one side by using the method of ultrasonic shot peening. The opposite side of the discs maintained the original coarse-grained condition. The gaseous nitriding was subsequently carried out at three different temperatures: 460, 500 and 560degreesC. The compound layer growth and diffusion behavior were then studied. It was revealed that SNC pretreatment greatly enhances both diffusion coefficient D and surface reaction rate. As a result, nitriding time could be reduced to the half. It was also found that the growth of compound layer with nitriding time conformed with parabolic relationship from the start of nitriding process in the SNCed samples. |
部门归属 | shanghai jiao tong univ, sch mat sci & engn, shanghai 200030, peoples r china. univ technol troyes, lasmis, f-10000 troyes, france. chinese acad sci, inst met res, shenyang 110016, peoples r china.;pan, js (reprint author), shanghai jiao tong univ, sch mat sci & engn, shanghai 200030, peoples r china |
关键词 | Nitriding Process Ultrasonic Shot Peening Surface Nanocrystallization (Snc) Nanocrystallization |
URL | 查看原文 |
WOS记录号 | WOS:000179670900025 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/36231 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | D. H. Bei,J. F. Gu,J. S. Pan,et al. Gaseous nitriding process of surface nano crystallized (SNCed) steel[J]. Journal of Materials Science & Technology,2002,18(6):566-568. |
APA | D. H. Bei,J. F. Gu,J. S. Pan,J. Lu,&K. Lu.(2002).Gaseous nitriding process of surface nano crystallized (SNCed) steel.Journal of Materials Science & Technology,18(6),566-568. |
MLA | D. H. Bei,et al."Gaseous nitriding process of surface nano crystallized (SNCed) steel".Journal of Materials Science & Technology 18.6(2002):566-568. |
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