Effects of Si ion implantation and post-annealing on yellow luminescence from GaN

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	Effects of Si ion implantation and post-annealing on yellow luminescence from GaN
	L. Dai; J. C. Zhang; Y. Chen; G. Z. Ran; G. G. Qin
	2002
发表期刊	Physica B-Condensed Matter
ISSN	0921-4526
卷号	322 期号:1-2 页码:51-56
摘要	We have studied the effects of Si ion implantation and post-annealing on yellow luminescence (YL) from GaN. Two types of GaN samples grown by the metal-organic chemical vapor deposition method and labeled as GaN1 and GaN2 were studied. The PL spectrum of the as-grown GaN1 sample was dominated by a strong YL and that of the as-grown GaN2 sample was almost free from YL. After Si ion implantation with doses of both 1.3 x 10(13) and 1.0 x 10(16)cm(-2), the intensity ratios of YL to near band edge (NBE) emission (I-Y/I-NBE) for the GaN1 samples decreased markedly compared with those of the corresponding unimplanted ones both before and after post-annealing at temperatures up to 950degreesC. However, for the Si-ion-implanted GaN2 sample with a dose of 1.3 x 10(13)cm(-2), I-Y/I-NBE increased compared with that of the as-grown one both before and after post-annealing. Besides, the I-Y/I-NBE for Si-ion-implanted GaN1 with a dose of 1.3 x 10(13) cm(-2) increased monotonically with annealing temperature. Our results show that only the Si ion implantation being accompanied with high-temperature post-annealing could produce YL. The possible reasons for the marked reduction in I-Y/I-NBE for the GaN1 sample after Si-ion-implantation have been discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
部门归属	beijing univ, dept phys, beijing 100871, peoples r china. peking univ, state key lab mesoscop phys, beijing 100871, peoples r china. qu fu normal univ, dept phys, qu fu 273165, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;qin, gg (reprint author), beijing univ, dept phys, beijing 100871, peoples r china
关键词	Photoluminescence Yellow Luminescence Ion implantatIon Gan Detected Magnetic-resonance Vapor-phase Epitaxy Laser-diodes Undoped Gan Photoluminescence Vacancies Layers Origin
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WOS记录号	WOS:000178089100007
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36255
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	L. Dai,J. C. Zhang,Y. Chen,et al. Effects of Si ion implantation and post-annealing on yellow luminescence from GaN[J]. Physica B-Condensed Matter,2002,322(1-2):51-56.
APA	L. Dai,J. C. Zhang,Y. Chen,G. Z. Ran,&G. G. Qin.(2002).Effects of Si ion implantation and post-annealing on yellow luminescence from GaN.Physica B-Condensed Matter,322(1-2),51-56.
MLA	L. Dai,et al."Effects of Si ion implantation and post-annealing on yellow luminescence from GaN".Physica B-Condensed Matter 322.1-2(2002):51-56.