Indentation induced amorphization in gallium arsenide

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	Indentation induced amorphization in gallium arsenide
	Z. C. Li; L. Liu; X. Wu; L. L. He; Y. B. Xu
	2002
发表期刊	Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing
ISSN	0921-5093
卷号	337 期号:1-2 页码:21-24
摘要	Vickers indentations were carried out on the surface of GaAs single crystal with the load of 0.049 N and were observed using high-resolution electron microscopy in the present experiment. The experimental results reveal that many defects such as dislocation, microtwin and stacking-fault occurred and amorphization took place beneath the indentation. High-pressure induced amorphization and shear deformation induced amorphization were proposed for the transformation from crystalline to amorphous structure. (C) 2002 Elsevier Science B.V. All rights reserved.
部门归属	chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. wayne state univ, dept mech & engn, detroit, mi 48202 usa.;li, zc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
关键词	Indentation Amorphization Gallium Arsenide Phase-transition High-pressure Silicon Hardness Microindentation Crystals
URL	查看原文
WOS记录号	WOS:000179005400004
引用统计	被引频次：16[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36326
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	Z. C. Li,L. Liu,X. Wu,et al. Indentation induced amorphization in gallium arsenide[J]. Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,2002,337(1-2):21-24.
APA	Z. C. Li,L. Liu,X. Wu,L. L. He,&Y. B. Xu.(2002).Indentation induced amorphization in gallium arsenide.Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing,337(1-2),21-24.
MLA	Z. C. Li,et al."Indentation induced amorphization in gallium arsenide".Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing 337.1-2(2002):21-24.