| TEM observation of the phase transition in indented GaAs |
| Z. C. Li; L. Liu; X. Wu; L. L. He; Y. B. Xu
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| 2002
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| 发表期刊 | Materials Letters
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| ISSN | 0167-577X
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| 卷号 | 55期号:3页码:200-204 |
| 摘要 | Indentations carried out with the loads of 0.0049, 0.049 and 0.098 N, respectively, on the surface of GaAs single crystal have been observed using transmission electron microscopy (TEM). The results show that plastic deformation took place in all the samples and phase transformation was induced by indentation. The microcrystal occurred beneath the 0.0049-N load indentation and the amorphous structure was formed under the 0.049-N load indentation. No obvious phase transformation was found beneath the 0.098-N load indentation. The possible mechanisms for the transformation from crystalline to the amorphous and microcrystalline structure were discussed. (C) 2002 Published by Elsevier Science B.V. |
| 部门归属 | chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china. wayne state univ, dept mech & engn, detroit, mi 48202 usa.;li, zc (reprint author), chinese acad sci, inst met res, shenyang natl lab mat sci, shenyang 110016, peoples r china
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| 关键词 | Gaas Single Crystal
Vickers Indentation
Phase Transition
High-pressure
Silicon
Indentation
Hardness
Microindentation
Crystals
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| URL | 查看原文
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| WOS记录号 | WOS:000176852000012
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| 引用统计 |
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| 文献类型 | 期刊论文
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| 条目标识符 | http://ir.imr.ac.cn/handle/321006/36327
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| 专题 | 中国科学院金属研究所
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推荐引用方式
GB/T 7714 |
Z. C. Li,L. Liu,X. Wu,et al. TEM observation of the phase transition in indented GaAs[J]. Materials Letters,2002,55(3):200-204.
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| APA |
Z. C. Li,L. Liu,X. Wu,L. L. He,&Y. B. Xu.(2002).TEM observation of the phase transition in indented GaAs.Materials Letters,55(3),200-204.
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| MLA |
Z. C. Li,et al."TEM observation of the phase transition in indented GaAs".Materials Letters 55.3(2002):200-204.
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