Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si | |
M. Y. Liao; X. M. Meng; X. T. Zhou; J. Q. Hu; Z. G. Wang | |
2002 | |
发表期刊 | Journal of Crystal Growth
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ISSN | 0022-0248 |
卷号 | 236期号:1-3页码:85-89 |
摘要 | Nanocrystalline diamond films were grown by a two-step process on Si(1 0 0) substrate, which was first pretreated by pure carbon ions bombardment. The bombarded Si substrate was then transformed into a hot-filament chemical vapor deposition (HFCVD) system for further growth. Using the usual CH4/H-3 feed gas ratio for micro crystalline diamond growth, nanodiamond crystallites were obtained. The diamond nucleation density is comparable to that obtained by biasing the substrate. The uniformly distributed lattice damage is proposed to be responsible for the formation of the nanodiamond. (C) 2002 Elsevier Science B.V. All rights reserved. |
部门归属 | chinese acad sci, inst met res, synl, shenyang, peoples r china. univ sci & technol china, dept chem, struct res lab, anhua 230026, peoples r china. chinese acad sci, inst semicond, lab semicond mat science, beijing 100083, peoples r china.;liao, my (reprint author), chinese acad sci, inst semicond, lab semicond mat science, beijing 100083, peoples r china |
关键词 | Nucleation Chemical Vapor Deposition Processes Diamond Nanomaterials Diamond Thin-films Amorphous-carbon Plasmas System Field |
URL | 查看原文 |
WOS记录号 | WOS:000174437900015 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.imr.ac.cn/handle/321006/36333 |
专题 | 中国科学院金属研究所 |
推荐引用方式 GB/T 7714 | M. Y. Liao,X. M. Meng,X. T. Zhou,et al. Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si[J]. Journal of Crystal Growth,2002,236(1-3):85-89. |
APA | M. Y. Liao,X. M. Meng,X. T. Zhou,J. Q. Hu,&Z. G. Wang.(2002).Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si.Journal of Crystal Growth,236(1-3),85-89. |
MLA | M. Y. Liao,et al."Nanodiamond formation by hot-filament chemical vapor deposition on carbon ions bombarded Si".Journal of Crystal Growth 236.1-3(2002):85-89. |
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