Study on the annealing effects of proton-implanted rutile

IMR OpenIR

	Study on the annealing effects of proton-implanted rutile
	T. C. Lu; L. B. Lin; S. G. Chen; S. Y. Wu; G. Cheng; X. C. Xu
	2002
发表期刊	Surface & Coatings Technology
ISSN	0257-8972
卷号	158 页码:426-430
摘要	The annealing effects of proton-implanted rutile single crystal have been investigated with positron annihilation technology (PAT). The stoichiometric and non-stoichiometric rutile crystals were implanted by protons, with an energy of 4.9 MeV and a fluence of 1 X 10(18) m(-2). Implanted samples were annealed from room temperature to 500 degreesC with steps of 50 degreesC. Positron annihilation lifetime spectra were used to study the dynamic variation of defects. Corresponding optical absorption spectra were also measured for comparison. The results show that, implanted H+ ions induce defects being different in stoichiometric and nonstoichiometric samples. The defects aggregate to bigger, complex clusters during annealing, then decompose into small, simple defects again. The aggregating temperature of different defects is different. For non-stoichiometric rutile, the results of PAT measurements are satisfactorily consistent with those of optical absorption. The mechanism of annealing effects is also discussed. (C) 2002 Elsevier Science B.V. All rights reserved.
部门归属	sichuan univ, dept phys, educ minist china, key lab radiat phys & radiat technol, chengdu 610064, peoples r china. sichuan univ, dept mat sci, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110015, peoples r china.;lu, tc (reprint author), sichuan univ, dept phys, educ minist china, key lab radiat phys & radiat technol, chengdu 610064, peoples r china
关键词	Titanium Oxide Ion implantatIon Defects Positron Spectroscopy Photon Absorption Spectroscopy Tio2 Single-crystals Lattice Disorder Ion Recovery Defects
URL	查看原文
WOS记录号	WOS:000178482100080
引用统计
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36361
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	T. C. Lu,L. B. Lin,S. G. Chen,et al. Study on the annealing effects of proton-implanted rutile[J]. Surface & Coatings Technology,2002,158:426-430.
APA	T. C. Lu,L. B. Lin,S. G. Chen,S. Y. Wu,G. Cheng,&X. C. Xu.(2002).Study on the annealing effects of proton-implanted rutile.Surface & Coatings Technology,158,426-430.
MLA	T. C. Lu,et al."Study on the annealing effects of proton-implanted rutile".Surface & Coatings Technology 158(2002):426-430.