Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation

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	Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation
	X. L. Ma; Y. L. Zhu; Z. Zhang
	2002
发表期刊	Philosophical Magazine Letters
ISSN	0950-0839
卷号	82 期号:8 页码:461-468
摘要	One-dimensional silicon nanowires have been grown by thermal evaporation and their growth orientations determined by transmission electron microscopy studies. The nanowires, which are often highly curved in morphology and heavily twinned in microstructure, are crystallographically separated into several sections, each with a characteristic crystallographic orientation along the wire axis. Straight nanowires, or straight sections in a curved nanowire, are found to have non-unique crystallographic orientations when {111} twinning occurs.
部门归属	chinese acad sci, shenyang natl lab mat sci, inst met res, shenyang 110016, peoples r china. chinese acad sci, inst phys, beijing lab electron microscopy, beijing 100080, peoples r china.;ma, xl (reprint author), chinese acad sci, shenyang natl lab mat sci, inst met res, wenhua rd 72, shenyang 110016, peoples r china
关键词	Transmission Electron-microscopy Si Nanowires Laser-ablation Semiconductor Nanowires
URL	查看原文
WOS记录号	WOS:000177532600006
引用统计	被引频次：10[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36375
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	X. L. Ma,Y. L. Zhu,Z. Zhang. Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation[J]. Philosophical Magazine Letters,2002,82(8):461-468.
APA	X. L. Ma,Y. L. Zhu,&Z. Zhang.(2002).Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation.Philosophical Magazine Letters,82(8),461-468.
MLA	X. L. Ma,et al."Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation".Philosophical Magazine Letters 82.8(2002):461-468.