First-principle calculation of the properties of Ti3SiC2

IMR OpenIR

	First-principle calculation of the properties of Ti3SiC2
	D. W. Shi; Y. C. Zhou
	2002
发表期刊	Journal of Materials Science & Technology
ISSN	1005-0302
卷号	18 期号:2 页码:146-148
摘要	The electronic and structural properties for Ti3SiC2 were studied using the first-principle calculation method. By using the calculated band structure and density of states, the high electrical conductivity of Ti3SiC2 are explained. The bonding character of Ti3SiC2 is analyzed in the map of charge density distribution.
部门归属	chinese acad sci, met res inst, int ctr mat phys, shenyang 110016, peoples r china. chinese acad sci, inst met res, ceram & composite dept, shenyang 110016, peoples r china.;shi, dw (reprint author), chinese acad sci, met res inst, int ctr mat phys, shenyang 110016, peoples r china
关键词	First-principle Calculation Ti3sic2 Charge Density Distribution Ab-initio Intercalation Ceramics
URL	查看原文
WOS记录号	WOS:000174881400014
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36410
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	D. W. Shi,Y. C. Zhou. First-principle calculation of the properties of Ti3SiC2[J]. Journal of Materials Science & Technology,2002,18(2):146-148.
APA	D. W. Shi,&Y. C. Zhou.(2002).First-principle calculation of the properties of Ti3SiC2.Journal of Materials Science & Technology,18(2),146-148.
MLA	D. W. Shi,et al."First-principle calculation of the properties of Ti3SiC2".Journal of Materials Science & Technology 18.2(2002):146-148.