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Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4; Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4
H. F. Yang; G. H. Rao; W. G. Chu; G. Y. Liu; Z. W. Ouyang; J. K. Liang
2002 ; 2002
发表期刊Journal of Alloys and Compounds ; Journal of Alloys and Compounds
ISSN0925-8388 ; 0925-8388
卷号339期号:1-2页码:189-194
摘要Phase relationships at ambient temperature in the pseudobinary system Pr5Si4-Pr5Ge4 were studied by X-ray powder diffraction (XRD). Three structurally distinct phase regions exist in this system. The Pr5Si4-based solid solution where Ge statistically substitutes for Si crystallizes in the Zr5Si4-type tetragonal structure with space group P4(1)2(1)2. The Pr5Ge4-based solid solution where Si statistically substitutes for Ge crystallizes in Sm5Ge4-type orthorhombic structure with space group Pnma. The crystal structure of a ternary intermediate phase, which exists between 1.65 less than or equal to x less than or equal to 2.6, is determined for the first time, and shown to be the Gd5Si2Ge2-type monoclinic structure with space group P112(1)/a. The Rietveld powder diffraction profile fitting technique was used for the refinement of crystal structure. The lattice parameters, atomic occupations, interatomic distances of the Pr5Si4, Pr5Ge4 and Pr5Si2Ge2 compounds were derived. (C) 2002 Elsevier Science B.V. All rights reserved.; Phase relationships at ambient temperature in the pseudobinary system Pr5Si4-Pr5Ge4 were studied by X-ray powder diffraction (XRD). Three structurally distinct phase regions exist in this system. The Pr5Si4-based solid solution where Ge statistically substitutes for Si crystallizes in the Zr5Si4-type tetragonal structure with space group P4(1)2(1)2. The Pr5Ge4-based solid solution where Si statistically substitutes for Ge crystallizes in Sm5Ge4-type orthorhombic structure with space group Pnma. The crystal structure of a ternary intermediate phase, which exists between 1.65 less than or equal to x less than or equal to 2.6, is determined for the first time, and shown to be the Gd5Si2Ge2-type monoclinic structure with space group P112(1)/a. The Rietveld powder diffraction profile fitting technique was used for the refinement of crystal structure. The lattice parameters, atomic occupations, interatomic distances of the Pr5Si4, Pr5Ge4 and Pr5Si2Ge2 compounds were derived. (C) 2002 Elsevier Science B.V. All rights reserved.
部门归属chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed matter phys, beijing 100080, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;yang, hf (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china ; chinese acad sci, inst phys, beijing 100080, peoples r china. chinese acad sci, ctr condensed matter phys, beijing 100080, peoples r china. acad sinica, int ctr mat phys, shenyang 110015, peoples r china.;yang, hf (reprint author), chinese acad sci, inst phys, pob 603, beijing 100080, peoples r china
关键词Rare Earth Compounds Rare Earth Compounds Crystal Structure Crystal Structure X-ray Diffraction X-ray Diffraction Gd-5(Si2ge2) Gd-5(Si2ge2) Transition Transition Gd-5(Sixge1-x)(4) Gd-5(Sixge1-x)(4)
URL查看原文 ; 查看原文
WOS记录号WOS:000176054000026 ; WOS:000176054000026
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被引频次:30[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.imr.ac.cn/handle/321006/36485
专题中国科学院金属研究所
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GB/T 7714
H. F. Yang,G. H. Rao,W. G. Chu,et al. Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4, Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4[J]. Journal of Alloys and Compounds, Journal of Alloys and Compounds,2002, 2002,339, 339(1-2):189-194, 189-194.
APA H. F. Yang,G. H. Rao,W. G. Chu,G. Y. Liu,Z. W. Ouyang,&J. K. Liang.(2002).Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4.Journal of Alloys and Compounds,339(1-2),189-194.
MLA H. F. Yang,et al."Crystal structure and phase relationships in the pseudobinary system Pr5Si4-Pr5Ge4".Journal of Alloys and Compounds 339.1-2(2002):189-194.
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