Crystal-field analysis of the magnetic properties measured on a Ho2Co15Si2 single crystal

IMR OpenIR

	Crystal-field analysis of the magnetic properties measured on a Ho2Co15Si2 single crystal
	M. H. Yu; Y. Janssen; O. Tegus; J. C. P. Klaasse; Z. D. Zhang; E. Bruck; F. R. de Boer; K. H. J. Buschow
	2002
发表期刊	Physical Review B
ISSN	1098-0121
卷号	65 期号:22
摘要	We have measured the magnetic properties of a Ho2Co15Si2 single crystal in the temperature range 5-350 K with magnetic fields applied on the free crystal and along three major crystallographic directions of the fixed crystal. The temperature dependence of the magnetization measured on the free crystal shows that the Ho and Co moments compensate at 35 K, and continuous plane-cone-axis spin-reorientation transitions take place in a certain temperature range above room temperature. The field dependence of the total magnetization shows strong differences when measured along the three main crystallographic directions. In particular, this is the case at low temperatures where the magnetic isotherms are indicative of field-induced magnetic phase transitions. The magnetic isotherms at high temperatures show a marked magnetization anisotropy. We have analyzed our data, especially the field-induced and temperature-induced magnetic phase transitions in terms of a two-sublattice model in which the molecular-field interaction, the crystal-field interaction, and the moment anisotropy are important ingredients. A set of crystalline-electric-field parameters as well as the Ho-Co exchange field has been determined for the Ho2Co15Si2 single crystal by fitting the experimental results with model calculations. The calculated magnetic behavior shows a good agreement with the experimental results in the temperature range presently studied, demonstrating the reliability of the determined parameters. It has been found that the Ho moment changes slightly in value during the spin-reorientation transition, and that there is a distinct magnetization anisotropy in the magnetic isotherms at high temperatures. These phenomena are intimately related to the marked direction dependence of the Ho moment.
部门归属	chinese acad sci, shenyang natl lab mat sci, shenyang 110016, peoples r china. chinese acad sci, int ctr mat phys, inst met res, shenyang 110016, peoples r china. univ amsterdam, van der waals zeeman inst, nl-1018 xe amsterdam, netherlands.;yu, mh (reprint author), chinese acad sci, shenyang natl lab mat sci, shenyang 110016, peoples r china
关键词	r = Pr Dy Ho Er Anisotropy Nd Sm Gd Tb
URL	查看原文
WOS记录号	WOS:000176767100065
引用统计	被引频次：1[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36506
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	M. H. Yu,Y. Janssen,O. Tegus,et al. Crystal-field analysis of the magnetic properties measured on a Ho2Co15Si2 single crystal[J]. Physical Review B,2002,65(22).
APA	M. H. Yu.,Y. Janssen.,O. Tegus.,J. C. P. Klaasse.,Z. D. Zhang.,...&K. H. J. Buschow.(2002).Crystal-field analysis of the magnetic properties measured on a Ho2Co15Si2 single crystal.Physical Review B,65(22).
MLA	M. H. Yu,et al."Crystal-field analysis of the magnetic properties measured on a Ho2Co15Si2 single crystal".Physical Review B 65.22(2002).