A simple model to estimate the yield strength of silicon carbide particulate reinforced aluminium alloy matrix composites | |
M. J. Zhao; L. J. Zhu; Y. Liu; J. Bi | |
2002 | |
Source Publication | Journal of Materials Science & Technology
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ISSN | 1005-0302 |
Volume | 18Issue:3Pages:193-194 |
Abstract | In the present study, a modified Hall-Petch correlation on the basis of dislocation pile-up model was used to estimate the yield strength of SiCp/Al composites. The experimental results show that the modified Hall-Petch correlation expressed as sigma(cy)=244+371lambda(-1/2) fits very well with the experimental data, which indicated that the strength increase of SiCp/Al composites might be due to the direct blocking of dislocation motion by the particulate-matrix interface, namely, the dislocation pile-up is the most possible strengthening mechanism for SiCp/Al composites. |
description.department | chinese acad sci, inst met res, shenyang 110016, peoples r china. shenyang univ, shenyang 110044, peoples r china.;zhao, mj (reprint author), chinese acad sci, inst met res, shenyang 110016, peoples r china |
Keyword | Sicp/al Composite Hall-petch Correlation Dislocation Yield Strength Deformation Fracture |
URL | 查看原文 |
WOS ID | WOS:000176003400001 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.imr.ac.cn/handle/321006/36566 |
Collection | 中国科学院金属研究所 |
Recommended Citation GB/T 7714 | M. J. Zhao,L. J. Zhu,Y. Liu,et al. A simple model to estimate the yield strength of silicon carbide particulate reinforced aluminium alloy matrix composites[J]. Journal of Materials Science & Technology,2002,18(3):193-194. |
APA | M. J. Zhao,L. J. Zhu,Y. Liu,&J. Bi.(2002).A simple model to estimate the yield strength of silicon carbide particulate reinforced aluminium alloy matrix composites.Journal of Materials Science & Technology,18(3),193-194. |
MLA | M. J. Zhao,et al."A simple model to estimate the yield strength of silicon carbide particulate reinforced aluminium alloy matrix composites".Journal of Materials Science & Technology 18.3(2002):193-194. |
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