Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals

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	Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals
	W. C. Zheng; S. Y. Wu; M. Gong; J. Zi
	2002
发表期刊	Physical Review B
ISSN	1098-0121
卷号	66 期号:24
摘要	In this paper, the complete high-order perturbation formulas of electron-paramagnetic-resonance (EPR) parameters (zero-field splittings and g factors) for 3d(2) ion in trigonal tetrahedral clusters have been derived from a cluster approach. In these formulas, not only the contribution due to crystal-field mechanism, but also the contributions due to charge-transfer mechanism (which is neglected in the crystal-field theory) are included. From these formulas, the g shifts Deltag(parallel to)(=g(parallel to)-g(e)), Deltag(perpendicular to)(=g(perpendicular to)-g(e)) and the zero-field splittings D for various V3+ centers in 4H- and 6H-SiC crystals are reasonably explained. It is found that in the studies of EPR parameters for 3d(2) ions (particularly, in the case of ions having high valence state) in strong covalency crystals, both the contribution due to crystal-field mechanism and that due to charge-transfer mechanism should be taken into account.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. sichuan univ, dept phys, chengdu 610064, peoples r china. fudan univ, surface phys lab, natl key lab, shanghai 200433, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china
关键词	Superposition Model Silicon-carbide Sic Polytypes Spectra Impurities Ions
URL	查看原文
WOS记录号	WOS:000180319200035
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36580
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. C. Zheng,S. Y. Wu,M. Gong,et al. Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals[J]. Physical Review B,2002,66(24).
APA	W. C. Zheng,S. Y. Wu,M. Gong,&J. Zi.(2002).Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals.Physical Review B,66(24).
MLA	W. C. Zheng,et al."Electron paramagnetic resonance parameters for various V3+ centers in 4H- and 6H-SiC crystals".Physical Review B 66.24(2002).