Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS

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	Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS
	W. C. Zheng; S. Y. Wu; J. Zi
	2002
发表期刊	Semiconductor Science and Technology
ISSN	0268-1242
卷号	17 期号:5 页码:493-496
摘要	From the high-order perturbation formulae based on the two spin-orbit coupling parameter model, the electron paramagnetic resonance (EPR) parameters D, Deltag(//) (= g(//) - g(s)) and Deltag(perpendicular to) (= g(perpendicular to) - g(s)) for four Co2+ centres in Co2+-doped cubic (3C), hexagonal (2H) and 4H polytype ZnS crystals are studied using the parameters related to the structural data and the optical spectra of the studied systems. From the studies, the defect structures (characterized by the atomic positions, i.e. the relative atomic displacements delta(i) and epsilon(i) of Co2+ and S2- from the ideal positions) for Co2+ in 2H- and 4H-ZnS are obtained (for 3C-ZnS, Co2+ in the regular cubic position). The EPR parameters of various Co2+ centres in 3C-, 2H- and 4H-ZnS are also reasonably explained.
部门归属	sichuan univ, dept mat sci, chengdu 610064, peoples r china. chinese acad sci, int ctr mat phys, shenyang 110016, peoples r china. fudan univ, natl key lab, surface phys lab, shanghai 200433, peoples r china.;zheng, wc (reprint author), sichuan univ, dept mat sci, chengdu 610064, peoples r china
关键词	Superposition Model Polymorphic Zns Crystal Semiconductors Spectra Site
URL	查看原文
WOS记录号	WOS:000175969200018
引用统计	被引频次：13[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.imr.ac.cn/handle/321006/36582
专题	中国科学院金属研究所
推荐引用方式 GB/T 7714	W. C. Zheng,S. Y. Wu,J. Zi. Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS[J]. Semiconductor Science and Technology,2002,17(5):493-496.
APA	W. C. Zheng,S. Y. Wu,&J. Zi.(2002).Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS.Semiconductor Science and Technology,17(5),493-496.
MLA	W. C. Zheng,et al."Investigations of the electron paramagnetic resonance parameters and atomic positions for Co2+ ions in 3C-, 2H- and 4H-ZnS".Semiconductor Science and Technology 17.5(2002):493-496.